Illumination and voltage effects on the forward and reverse bias current-voltage (I-V) characteristics in In/In2S3/p-Si photodiodes

Basit Öğe Kaydı
dc.authorscopusid57190938142
dc.authorscopusid57222350312
dc.authorscopusid57193666915
dc.authorscopusid7003589218
dc.authorscopusid9336280900
dc.contributor.authorYükseltürk, Esra
dc.contributor.authorSürücü, Özge
dc.contributor.authorTerlemezoğlu, Makbule
dc.contributor.authorParlak, Mehmet
dc.contributor.authorAltındal, Şemsettin
dc.date.accessioned2022-05-11T14:03:20Z
dc.date.available2022-05-11T14:03:20Z
dc.date.issued2021
dc.departmentFakülteler, Fen Edebiyat Fakültesi, Fizik Bölümü
dc.description.abstractThe illumination and voltage effects on the I-V measurements of the fabricated In/In2S3/p-Si photodiode were investigated in dark and under various illumination intensities (20–100 mW/cm2) between ± 2 V. Two linear regions in the forward-bias ln(I)-V plots were observed. The value of diode ideality factor (n) had an increasing trend with increasing illumination intensity while the barrier height (?Bo) had a decreasing trend due to the increase of photocurrent. The photodiode properties were also investigated, and the value of linear-dynamic value range (LDR) was found to be 20.56 dB. The photoresponse (Iph/Idark), the photoresponsivity (R), and specific detectivity (D*) of the photodiode were calculated as a function of the illumination. The open-circuit voltage (Voc) and short-current (Isc) were found to be 0.36 V and 2.87 mA under 100 mW.cm?2 illumination intensity, respectively. The possible conduction mechanisms (CMs) were investigated using the forward ln(I)-V and reverse ln(I)-V0.5 plots. The energy-dependent surface states (Nss) profile was extracted from the positive I-V data by considering voltage-dependent barrier height (BH) and ideality factor (n) in dark and illumination at 100 mW/cm2. © 2021, The Author(s), under exclusive licence to Springer Science+Business Media, LLC, part of Springer Nature.
dc.identifier.doi10.1007/s10854-021-06378-4
dc.identifier.endpage21836
dc.identifier.issn0957-4522
dc.identifier.issue17en_US
dc.identifier.scopus2-s2.0-85112741046
dc.identifier.scopusqualityQ2
dc.identifier.startpage21825
dc.identifier.urihttps://doi.org/10.1007/s10854-021-06378-4
dc.identifier.urihttps://hdl.handle.net/20.500.11776/4671
dc.identifier.volume32
dc.identifier.wosWOS:000686477600001
dc.identifier.wosqualityQ2
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.institutionauthorTerlemezoğlu, Makbule
dc.language.isoen
dc.publisherSpringer
dc.relation.ispartofJournal of Materials Science: Materials in Electronics
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.subjectIndium compounds
dc.subjectOpen circuit voltage
dc.subjectPhotocurrents
dc.subjectPhotodiodes
dc.subjectSilicon compounds
dc.subjectConduction Mechanism
dc.subjectDiode ideality factors
dc.subjectEnergy dependent
dc.subjectI-V measurements
dc.subjectIdeality factors
dc.subjectIllumination intensity
dc.subjectPhotoresponsivity
dc.subjectSpecific detectivity
dc.subjectBias voltage
dc.titleIllumination and voltage effects on the forward and reverse bias current-voltage (I-V) characteristics in In/In2S3/p-Si photodiodes
dc.typeArticle

Dosyalar

Orijinal paket
Listeleniyor 1 - 1 / 1
Küçük Resim Yok
İsim:
4671.pdf
Boyut:
1.29 MB
Biçim:
Adobe Portable Document Format
Açıklama:
Tam Metin / Full Text
İndir

Koleksiyon

WoS İndeksli Yayınlar Koleksiyonu
Fen Edebiyat Fakültesi Koleksiyonu
Scopus İndeksli Yayınlar Koleksiyonu