Temperature-dependent material characterization of CuZnSe2 thin films

Basit Öğe Kaydı
dc.authorscopusid36766075800
dc.authorscopusid55660608000
dc.authorscopusid57193666915
dc.authorscopusid23766993100
dc.authorscopusid6602475990
dc.authorscopusid35580905900
dc.authorscopusid7003589218
dc.contributor.authorGüllü, H. H.
dc.contributor.authorSurucu, O.
dc.contributor.authorTerlemezoğlu, Makbule
dc.contributor.authorIşık, M.
dc.contributor.authorErcelebi, C.
dc.contributor.authorGasanly, Nizami Mamed
dc.contributor.authorParlak, Mehmet
dc.date.accessioned2022-05-11T14:03:18Z
dc.date.available2022-05-11T14:03:18Z
dc.date.issued2020
dc.departmentFakülteler, Fen Edebiyat Fakültesi, Fizik Bölümü
dc.description.abstractIn the present work, CuZnSe2 (CZSe) thin films were co-deposited by magnetron sputtering of ZnSe and Cu targets. The structural analyses resulted in the stoichiometric elemental composition and polycrystalline nature without secondary phase contribution in the film structure. Optical and electrical properties of CZSe thin films were investigated using temperature-dependent optical transmission and electrical conductivity measurements. The band gap energy values were obtained using transmittance spectra under the light of expression relating absorption coefficient to incident photon energy. Band gap energy values were found in decreasing behavior from 2.31 to 2.27 eV with increase in temperature from 10 to 300 K. Temperature-band gap dependency was evaluated by Varshni and O'Donnell models to detail the optical parameters of the thin films. The experimental dark and photoconductivity values were investigated by thermionic emission model over the grain boundary potential. Room temperature conductivity values were obtained in between 0.91 and 4.65 (× 10?4 ??1cm?1) under various illumination intensities. Three different linear conductivity regions were observed in the temperature dependent profile. These linear regions were analyzed to extract the activation energy values. © 2020 Elsevier B.V.
dc.description.sponsorshipOrta Doğu Teknik Üniversitesi: METU-GAP-105–2018–2755
dc.description.sponsorshipThis work was financed by Middle East Technical University under Grant No. METU-GAP-105–2018–2755.
dc.identifier.doi10.1016/j.tsf.2020.137941
dc.identifier.issn0040-6090
dc.identifier.scopus2-s2.0-85081653739
dc.identifier.scopusqualityQ2
dc.identifier.urihttps://doi.org/10.1016/j.tsf.2020.137941
dc.identifier.urihttps://hdl.handle.net/20.500.11776/4666
dc.identifier.volume701
dc.identifier.wosWOS:000525745900021
dc.identifier.wosqualityQ3
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.institutionauthorTerlemezoğlu, Makbule
dc.language.isoen
dc.publisherElsevier B.V.
dc.relation.ispartofThin Solid Films
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.subjectOptical properties
dc.subjectPhotoconductivity
dc.subjectTemperature effect
dc.subjectThin film
dc.subjectActivation energy
dc.subjectEnergy gap
dc.subjectGrain boundaries
dc.subjectII-VI semiconductors
dc.subjectLight transmission
dc.subjectOptical properties
dc.subjectPhotoconductivity
dc.subjectSelenium compounds
dc.subjectThermal effects
dc.subjectThermionic emission
dc.subjectThin films
dc.subjectZinc Selenide
dc.subjectAbsorption co-efficient
dc.subjectElectrical conductivity measurements
dc.subjectElemental compositions
dc.subjectIllumination intensity
dc.subjectIncident photon energy
dc.subjectOptical and electrical properties
dc.subjectRoom-temperature conductivity
dc.subjectTemperature-dependent material
dc.subjectOptical films
dc.titleTemperature-dependent material characterization of CuZnSe2 thin films
dc.typeArticle

Dosyalar

Orijinal paket
Listeleniyor 1 - 1 / 1
Küçük Resim Yok
İsim:
4666.pdf
Boyut:
1.6 MB
Biçim:
Adobe Portable Document Format
Açıklama:
Tam Metin / Full Text
İndir

Koleksiyon

WoS İndeksli Yayınlar Koleksiyonu
Fen Edebiyat Fakültesi Koleksiyonu
Scopus İndeksli Yayınlar Koleksiyonu