Yazar "Demirbilek, N." seçeneğine göre listele

Listeleniyor 1 - 2 / 2
  • Küçük Resim
    Öğe
    Investigation of structural and optical properties of pure ZnO and co-doped ZnO:Al:Mnx (x=1%, 2%, 3%, 5% at.) semiconductor thin films and electrical properties of produced diodes
    (Gazi Universitesi, 2023) Demirbilek, N.; Kaya, Mehmet; Yakuphanoğlu, Fahrettin
    In this work, undoped and co-doped ZnO:Al:Mn semiconductor thin films and p-type Si diodes were produced via sol-gel technique method. The morphological and optical properties of the produced thin films were investigated using SEM, XRD and UV-Spectrophotometer, respectively. It was observed that the crystal structure of the semiconductor samples had a hexagonal wurtzite structure and the forbidden energy gaps of the samples decreased with increasing Mn contribution. The experimental zero-feed current barrier height (?b(I-V)), rectification ratio, ideality factor and Ion/Ioff parameters of the diodes were determined via the thermionic emission model. It was determined that the produced Al/p-Si/ZnO:Al:Mn/Al diode had high rectification ratio and Ion/Ioff values of 1.56x105 and 1.54x104, respectively, and exhibited light-sensitive behaviour. Also, the capacitance barrier height (?b(C-V)), built-in voltage (Vbi), diffusion potential (Vd), donor concentration (Nd) and depletion layer width (Wd) values of Al/p-Si/ZnO:Al:Mn/Al diode were calculated via the C-2-V graph drawn under 1MHz frequency. The results show that the fabricated diodes can be used as photodiodes or photosensors in optoelectronic applications. © 2023 Gazi Universitesi Muhendislik-Mimarlik. All rights reserved.
  • Küçük Resim Yok
    Öğe
    Structural and optical properties of pure ZnO and Al/Cu co-doped ZnO semiconductor thin films and electrical characterization of photodiodes
    (Walter de Gruyter GmbH, 2021) Demirbilek, N.; Yakuphanoğlu, F.; Kaya, M.
    Nano-structured semiconductor thin films and p-type Si photodiodes were fabricated with the sol-gel spin coating technique using pure ZnO and co-doped ZnO:Alx:Cuy with x = 1 at.-%, y = 1, 2, 3, 5 at.-%. The structural and optical properties of thin films were examined using an XRD and a UV-spectrophotometer. The thin films have a hexagonal wurtzite crystal structure, and their optical band gap energies decrease with increasing Cu contribution. The electrical properties of photodiodes were assessed via I-V, C-V, (G/?)-V and phototransient current (I-t, C-t) measurements. The ?b(I-V), experimental zero-bias barrier height, rectification ratio, ideality factor and Ion/Ioff parameters of the diodes were calculated using thermoionic emission model. In addition, ?b(C-V), barrier height, Vbi, built-in voltage, Vd, diffusion potential, Nd, donor concentration and Wd, depletion layer width of p-Si/ZnO:Alx:Cuy (x = 1 at.-%, y = 1 at.-%.) photodiodes were obtained using a C-2-V graph plotted at 1 MHz frequency.The photodiodes exhibit rectifying and photosensitive behaviors, and their reverse bias current increases with increasing light intensity. These results indicate that produced diodes can be employed as photodiodes or photosensors in optoelectronic circuits and electronic devices. © 2021 Walter de Gruyter GmbH, Berlin/Boston, Germany.