Investigation of carrier transport mechanisms in the Cu-Zn-Se based hetero-structure grown by sputtering technique

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dc.authorid0000-0001-9542-5121
dc.authorid0000-0001-8541-5309
dc.authorid0000-0001-7912-0176
dc.authorid0000-0002-8478-1267
dc.authorid0000-0003-2212-199X
dc.authorwosidparlak, mehmet/ABB-8651-2020
dc.authorwosidGULLU, HASAN HUSEYIN/F-7486-2019
dc.authorwosidSURUCU, Ozge/ABA-4839-2020
dc.authorwosidTerlemezoglu, Makbule/ABA-5010-2020
dc.authorwosidYıldız, Dilber Esra/AAB-6411-2020
dc.contributor.authorGüllü, H. H.
dc.contributor.authorTerlemezoğlu, Makbule
dc.contributor.authorBayraklı Sürücü, Özge
dc.contributor.authorYıldız, D. E.
dc.contributor.authorParlak, Mehmet
dc.date.accessioned2022-05-11T14:29:34Z
dc.date.available2022-05-11T14:29:34Z
dc.date.issued2018
dc.departmentFakülteler, Fen Edebiyat Fakültesi, Fizik Bölümü
dc.description33rd International Physics Conference of Turkish-Physical-Society (TPS) -- SEP 06-10, 2017 -- Konacik, TURKEY
dc.description.abstractIn this paper, we present results of the electrical characterization of n-Si/p-Cu-Zn-Se hetero-structure. Sputtered film was found in Se-rich behavior with tetragonal polycrystalline nature along with (112) preferred orientation. The band gap energy for direct optical transitions was obtained as 2.65 eV. The results of the conductivity measurements indicated p-type behavior and carrier transport mechanism was modelled according to thermionic emission theory. Detailed electrical characterization of this structure was carried out with the help of temperature-dependent current-voltage measurements in the temperature range of 220-360 K, room temperature, and frequency-dependent capacitance-voltage and conductance-voltage measurements. The anomaly in current-voltage characteristics was related to barrier height inhomogeneity at the interface and modified by the assumption of Gaussian distribution of barrier height, in which mean barrier height and standard deviation at zero bias were found as 2.11 and 0.24 eV, respectively. Moreover, Richardson constant value was determined as 141.95 Acm(-2)K(-2) by means of modified Richardson plot.
dc.description.sponsorshipTurkish Phys Soc
dc.identifier.doi10.1139/cjp-2017-0777
dc.identifier.endpage825
dc.identifier.issn0008-4204
dc.identifier.issn1208-6045
dc.identifier.issue7en_US
dc.identifier.startpage816
dc.identifier.urihttps://doi.org/10.1139/cjp-2017-0777
dc.identifier.urihttps://hdl.handle.net/20.500.11776/7039
dc.identifier.volume96
dc.identifier.wosWOS:000437293500032
dc.identifier.wosqualityQ3
dc.indekslendigikaynakWeb of Science
dc.institutionauthorTerlemezoğlu, Makbule
dc.language.isoen
dc.publisherCanadian Science Publishing, Nrc Research Press
dc.relation.ispartofCanadian Journal of Physics
dc.relation.publicationcategoryKonferans Öğesi - Uluslararası - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.subjectSchottky barriers
dc.subjectjunction diodes
dc.subjectsurface and interface states
dc.subjectthermionic emission
dc.subjectsputtering
dc.subjectSchottky
dc.subjectDiodes
dc.subjectCapacitance
dc.subjectParameters
dc.subjectVoltage
dc.titleInvestigation of carrier transport mechanisms in the Cu-Zn-Se based hetero-structure grown by sputtering technique
dc.typeConference Object

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