Fotovoltaik uygulamaları için elektrobiriktirme yöntemi ile büyütülmüş Zn katkılı Cds ince filmlerinin elektrofiziksel özellikleri
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Date
2021
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Tekirdağ Namık Kemal Üniversitesi
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Abstract
2.42eV' lik bant boşluğu ile heterojunction güneş pilleri için tampon tabaka olarak kullanılmak üzere uzun zamandır üzerinde çalışmalar yapılan CdS (Kadmiyum Sülfür) yarıiletkeni önemli bir yarıiletken malzemedir. CdS yarıiletkenin bant aralığının kontrolü ve yapısal özelliklerinin geliştirilmesi önemlidir. Elektrokimyasal olarak yarıiletken ince film birikimi, ekonomik ve geniş alan biriktirme kabiliyetine sahip olduğu için giderek daha popüler hale gelmektedir. Bu çalışmada, Zn (Çinko) katkılı kadmiyum sülfür ince filmler, basit iki elektrotlu bir sistem ve kadmiyum klorür ve sodyum tiyosülfat çözeltilerinin sulu çözeltileri kullanılarak 50° C sıcaklıkta elektrokimyasal biriktirme yöntemi ile indiyum kalay oksit cam altlıklar üzerine biriktirildi. Zn katkısının yapısal, morfolojik ve optik özellikler üzerindeki etkisi araştırıldı. Sonuçlar incelendiğinde, Zn katkılı CdS yarıiletken ince filmin nano yapıda ve homojen olarak elde edildiği görüldü. Ayrıca Zn katkısının CdS yarıiletken ince filmin bant aralığını artırdığı tespit edildi.
With a band gap of 2.42eV, CdS (Cadmium Sulphide) semiconductor is an important semiconductor material that has been studied for a long time to be used as a buffer layer for heterojunction solar cells. The semiconductor thin film with electrochemical deposition becomes increasingly popular because it has advantages of economical and capability of large area deposition. In this study, Zn (Zinc) doped cadmium sulfide thin films have been deposited onto indium tin oxide glass substrate by electrodeposition method at 50°C temperature using a simple two-electrode system and aqueous solutions of zinc chloride, cadmium chloride and sodium thiosulfate solutions. The effect of Zn doped on structural, morphological and optical properties was studied. When the results were examined, it was seen that the Zn doped CdS semiconductor thin film was obtained in a nano structure and homogeneously. It was also determined that the Zn additive increased the band gap of the CdS semiconductor thin film.
With a band gap of 2.42eV, CdS (Cadmium Sulphide) semiconductor is an important semiconductor material that has been studied for a long time to be used as a buffer layer for heterojunction solar cells. The semiconductor thin film with electrochemical deposition becomes increasingly popular because it has advantages of economical and capability of large area deposition. In this study, Zn (Zinc) doped cadmium sulfide thin films have been deposited onto indium tin oxide glass substrate by electrodeposition method at 50°C temperature using a simple two-electrode system and aqueous solutions of zinc chloride, cadmium chloride and sodium thiosulfate solutions. The effect of Zn doped on structural, morphological and optical properties was studied. When the results were examined, it was seen that the Zn doped CdS semiconductor thin film was obtained in a nano structure and homogeneously. It was also determined that the Zn additive increased the band gap of the CdS semiconductor thin film.
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Elektrik ve Elektronik Mühendisliği, Electrical and Electronics Engineering
