Voltage Differencing Buffered Amplifier Realisation Using 32 nm FinFET Technology and Universal Filter Applications
Küçük Resim Yok
Tarih
2024
Yazarlar
Dergi Başlığı
Dergi ISSN
Cilt Başlığı
Yayıncı
Kaunas Univ Technology
Erişim Hakkı
info:eu-repo/semantics/openAccess
Özet
paper presents high-frequency universal filter applications based on a voltage differential buffered amplifier (VDBA) using 32 nm fin field effect transistor (FinFET) technology. FinFET technology is a promising alternative to technology to avoid the problems caused by the decrease in transistor size as the technology evolves. In addition to the manufacturing process being similar to CMOS technology, FinFET technology offers many advantages, such as reduced short channel effects, higher drain current, reduced static leakage current, faster switching time, lower supply voltage, lower power consumption, and higher efficiency. The VDBA active circuit block, which has high input impedance and low output impedance, is preferred for high-frequency and highbandwidth applications. It is advantageous to design active filter circuits using VDBA because of its superior features, such as lower power consumption, higher bandwidth, wider range linearity, and the ability to implement the proposed circuits without external resistors. In this study, FinFET-based VDBA and filter application are simulated with the Spice simulation compared with those using 0.18 mu m TSMC technology. It is consumption by 98.8 % and increases bandwidth by 145 times. The successful results show that FinFET technology is superior to CMOS technology in analogue circuit design. FinFET-based VDBA circuits and filters will be more advantageous in the design of signal processing and biomedical applications.
Açıklama
Anahtar Kelimeler
Index Terms- Voltage differencing buffered amplifier, Voltage-mode filter, FinFET, Universal filter
Kaynak
Elektronika Ir Elektrotechnika
WoS Q Değeri
Q4
Scopus Q Değeri
Q3
Cilt
30
Sayı
5
