Structural and optical properties of pure ZnO and Al/Cu co-doped ZnO semiconductor thin films and electrical characterization of photodiodes

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dc.authorid0000-0001-9710-2254
dc.authorwosidKaya, Mehmet/ABA-4840-2020
dc.contributor.authorDemirbilek, Nihat
dc.contributor.authorYakuphanoğlu, Fahrettin
dc.contributor.authorKaya, Mehmet
dc.date.accessioned2022-05-11T14:07:19Z
dc.date.available2022-05-11T14:07:19Z
dc.date.issued2021
dc.departmentMeslek Yüksekokulları, Çorlu Meslek Yüksekokulu, Makine ve Metal Teknolojileri Bölümü
dc.description.abstractNano-structured semiconductor thin films and p-type Si photodiodes were fabricated with the sol-gel spin coating technique using pure ZnO and co-doped. ZnO:Al-x:Cu-y with x = 1 at.-%, y = 1, 2, 3, 5 at.-%. The structural and optical properties of thin films were examined using an XRD and a UV-spectrophotometer. The thin films have a hexagonal wurtzite crystal structure, and their optical band gap energies decrease with increasing Cu contribution. The electrical properties of photodiodes were assessed via I-V, C-V, (G/co)-V and phototransient current (14, C-t) measurements. The Phi(b(I-V)), experimental zero-bias barrier height, rectification ratio, ideality factor and I-on/I-off parameters of the diodes were calculated using thermoionic emission model. In addition, Phi(b(C-V)), barrier height, V-bi, built:-in voltage, V-d, diffusion potential, N-d, donor concentration and W-d, depletion layer width of p-SignO:Al-x:Cu-y (x = 1 at.-%, y = 1 at.-%.) photodiodes were obtained using a C-2-V graph plotted at 1 MHz frequency. The photodiodes exhibit rectifying and photosensitive behaviors, and their reverse bias current increases with increasing light intensity. These results indicate that produced diodes can be employed as photodiodes or photosensors in optoelectronic circuits and electronic devices.
dc.description.sponsorshipFirat UniversityFirat University [FF16.24]
dc.description.sponsorshipThis study was supported by Firat University, for PhD thesis (Project No. FF16.24).
dc.identifier.doi10.1515/mt-2020-0042
dc.identifier.endpage285
dc.identifier.issn0025-5300
dc.identifier.issn2195-8572
dc.identifier.issue3en_US
dc.identifier.startpage279
dc.identifier.urihttps://doi.org/10.1515/mt-2020-0042
dc.identifier.urihttps://hdl.handle.net/20.500.11776/5060
dc.identifier.volume63
dc.identifier.wosWOS:000636794000012
dc.identifier.wosqualityQ2
dc.indekslendigikaynakWeb of Science
dc.institutionauthorKaya, Mehmet
dc.language.isoen
dc.publisherWalter De Gruyter Gmbh
dc.relation.ispartofMaterials Testing
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.subjectSol-gel
dc.subjectphotodiode
dc.subjectZnO
dc.subjectnanostructure
dc.subjectoptical properties
dc.subjectsemiconductors
dc.titleStructural and optical properties of pure ZnO and Al/Cu co-doped ZnO semiconductor thin films and electrical characterization of photodiodes
dc.typeArticle

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