Structural and optical properties of pure ZnO and Al/Cu co-doped ZnO semiconductor thin films and electrical characterization of photodiodes
Küçük Resim Yok
Tarih
2021
Dergi Başlığı
Dergi ISSN
Cilt Başlığı
Yayıncı
Walter De Gruyter Gmbh
Erişim Hakkı
info:eu-repo/semantics/closedAccess
Özet
Nano-structured semiconductor thin films and p-type Si photodiodes were fabricated with the sol-gel spin coating technique using pure ZnO and co-doped. ZnO:Al-x:Cu-y with x = 1 at.-%, y = 1, 2, 3, 5 at.-%. The structural and optical properties of thin films were examined using an XRD and a UV-spectrophotometer. The thin films have a hexagonal wurtzite crystal structure, and their optical band gap energies decrease with increasing Cu contribution. The electrical properties of photodiodes were assessed via I-V, C-V, (G/co)-V and phototransient current (14, C-t) measurements. The Phi(b(I-V)), experimental zero-bias barrier height, rectification ratio, ideality factor and I-on/I-off parameters of the diodes were calculated using thermoionic emission model. In addition, Phi(b(C-V)), barrier height, V-bi, built:-in voltage, V-d, diffusion potential, N-d, donor concentration and W-d, depletion layer width of p-SignO:Al-x:Cu-y (x = 1 at.-%, y = 1 at.-%.) photodiodes were obtained using a C-2-V graph plotted at 1 MHz frequency. The photodiodes exhibit rectifying and photosensitive behaviors, and their reverse bias current increases with increasing light intensity. These results indicate that produced diodes can be employed as photodiodes or photosensors in optoelectronic circuits and electronic devices.
Açıklama
Anahtar Kelimeler
Sol-gel, photodiode, ZnO, nanostructure, optical properties, semiconductors
Kaynak
Materials Testing
WoS Q Değeri
Q2
Scopus Q Değeri
Cilt
63
Sayı
3
