Existence of Capacitive Effects in a Tungstenbased SDC Memristive System

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dc.contributor.authorDalmis, Ceylon
dc.contributor.authorMutlu, Resat
dc.contributor.authorKarakulah, Ertugrul
dc.date.accessioned2024-10-29T17:59:10Z
dc.date.available2024-10-29T17:59:10Z
dc.date.issued2023
dc.departmentTekirdağ Namık Kemal Üniversitesi
dc.description.abstractFollowing the discovery of a thin-film memristive system behaving as a memristor in 2008, memcapacitor and memcapacitive systems have also been described and become hot research areas. Tungsten-based SDC (Self-Directed Channel) memristors are already in the market and have already been used in circuit applications. They are modeled with the mean metastable switch memristor model in the literature. A memristor must have the three fingerprints described by Chua et al. In this paper, it is shown that the behavior of the Tungsten-based memristors is more complex than a memristive system and they do not always meet the three fingerprints of the memristor. It has been experimentally found that the capacitive effects are dominant at low frequencies when it is excited with a square wave voltage source when the Tungsten-based memristor is connected in series with a capacitor. It is important to model the new circuit element memristor accurately. The Tungsten-based memristors cannot be modeled just as a memristive system and only with the mean metastable switch memristor model. It is suggested that, perhaps, it can be modeled considering memcapacitive effects.
dc.description.sponsorshipScientific Research Projects Coordination Unit of Tekirdag Namik Kemal University [NKUBAP.42, 19.206]
dc.description.sponsorshipThis study was supported using the memristors bought by the project supported by the Scientific Research Projects Coordination Unit of Tekirdag Namik Kemal University. Project number: NKUBAP.42.GA.19.206.
dc.identifier.doi10.33180/InfMIDEM2023.301
dc.identifier.endpage135
dc.identifier.issn0352-9045
dc.identifier.issn2232-6979
dc.identifier.issue3en_US
dc.identifier.scopus2-s2.0-85180336040
dc.identifier.scopusqualityQ3
dc.identifier.startpage121
dc.identifier.urihttps://doi.org/10.33180/InfMIDEM2023.301
dc.identifier.urihttps://hdl.handle.net/20.500.11776/14651
dc.identifier.volume53
dc.identifier.wosWOS:001172819100001
dc.identifier.wosqualityQ4
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.language.isoen
dc.publisherSoc Microelectronics, Electron Components Materials-Midem
dc.relation.ispartofInformacije Midem-Journal of Microelectronics Electronic Components and Materials
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/openAccess
dc.subjectmemristor
dc.subjectmemristive systems
dc.subjectzero-crossing hysteresis curve
dc.subjectmemcapacitive effects
dc.subjectmemcapacitor
dc.titleExistence of Capacitive Effects in a Tungstenbased SDC Memristive System
dc.typeArticle

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