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Öğe A Low-Voltage Low-Power Full-Wave Rectifier Based on Dynamic Threshold Voltage MOSFET(Amer Scientific Publishers, 2019) Yeşil, Abdullah; Konal, Mustafa; Kaçar, FıratIn this paper, a low-voltage and low-power dynamic threshold voltage Metal Oxide Semiconductor Field Effect Transistor (DTMOS) based current mode full-wave rectifier is presented. This presented rectifier contains only MOS transistors and avoids the use of a diode. Therefore, it is suitable for integrated circuit realization and occupies a low chip area. Furthermore, the power supply voltages are +/- 0.25 V and power consumption of full-wave rectifier is 83 nW and hence the presented full-wave rectifier based on DTMOS can be characterized by a low voltage and low power. In addition, the presented full-wave rectifier has high output impedances. DC analysis, temperature analysis, frequency dependent transfer (p(DC)) and RMS error (p(RMS)) analysis are given in order to indicate the performance of the circuit. The rectifier circuit is capable of operating at frequencies up to 1 MHz. The simulation results are given by using SPICE programming..Öğe DTMOS based low-voltage low-power all-pass filter(Springer, 2021) Konal, Mustafa; Kaçar, FıratIn this paper, a voltage mode all-pass filter design employing floating current sources (FCS) is proposed. The presented all-pass filter circuit contains two floating current sources, one grounded resistor and one floating capacitor. Furthermore, the PMOS transistors of the FCSs are replaced with dynamic threshold-voltage MOSFET (DTMOS) transistors. Due to the use of DTMOS transistors, power consumption and supply voltages of the filter circuit are reduced considerably, compared to the classical circuit. The gain and phase responses, input and output waves, the total harmonic distortion (THD) results, temperature performance, output noise voltage and Monte Carlo (MC) analyses of the all-pass filter are simulated. The simulation results of the proposed DTMOS based circuit are performed with the LTSPICE program using 0.18 ?m TSMC CMOS process parameters. © 2021, The Author(s), under exclusive licence to Springer Science+Business Media, LLC, part of Springer Nature.Öğe Electrical Distribution Network's Failure Analysis Based on Weather Conditions(IEEE, 2018) Konal, Mustafa; Öz, İsmail; Uzunoglu, Cengiz Polat; Kaçar, FıratThe failure detection and response time for failures in electrical distribution networks are key elements for proper power management in distribution companies. The reliability of electrical distribution is strictly related with weather conditions especially in overhead lines. Severe weather conditions can rapidly increase failure rates in distribution networks where company responses for failures may delayed consequently. In this study, electrical distribution network statistics of Bedas Company for Gaziosmanpasa district which contains highest overhead line population in Istanbul are investigated. These statistics are collected from failure management system in Bedas Distribution Company between 2014 and 2016. Especially electrical connector and oxidation failure rates are analyzed for different weather conditions. These statistics are compared with first four months of year 2017 which exhibit severe weather conditions and heavy falls. This study reveals the relationship between different weather conditions and failures in electrical distribution network which can be utilized for predictive management for distribution companies in terms of failure elimination and quick failure response.Öğe Electronically controllable memcapacitor emulator employing VDCCs(Elsevier Gmbh, 2021) Konal, Mustafa; Kaçar, Fırat; Babacan, YunusMemcapacitors are become one of the research interest after the realization of memristors. Many researchers focused on the designing memcapacitor emulator because of some fabrication difficulties of this new element. In this paper, Voltage Differencing Current Conveyor (VDCC) based memcapacitor emulator is developed. This emulator is composed of two VDCCs and can be electronically controllable. To show the operation performance of the proposed circuit, some analyses and memcapacitor based associative learning circuit are given. TSMC 0.18 mu m process parameters are used to simulate the memcapacitor. The circuit is also implemented on breadboard using discrete circuit elements. Both theoretical and simulation results are good agreement when compared previous studies.Öğe Electronically Tunable Memcapacitor Emulator Based on Operational Transconductance Amplifiers(World Scientific, 2021) Konal, Mustafa; Kaçar, FıratMemory circuit elements are of interest due to their use in different fields of science and technology. In this research, a new multi-outputs operational transconductance amplifiers (MO-OTA)-based memcapacitor emulator is proposed. The proposed emulator employs two OTAs, two capacitors, two resistors and an analog multiplier. The memcapacitor emulator circuit has electronically tunability property. Charge value of the memcapacitor can be adjusted by changing the transconductance gm value with the biasing current of the MO-OTA or frequency value of the input signal. In order to analyze the performance of the proposed circuit, memcapacitor emulator is simulated in 0.18?m TSMC CMOS process using LTSPICE and the simulation results are demonstrated. © 2021 World Scientific Publishing Company.Öğe Electronically tunable meminductor based on OTA(Elsevier Gmbh, 2020) Konal, Mustafa; Kaçar, FıratIn this study, a meminductor emulator circuit based on operational transconductance amplifiers is proposed. The circuit consists of two OTAs (one simple and one multi output), an analog multiplier, two resistors (one grounded and one floating) and two capacitors (one grounded and one floating). Due to the proposed meminductor emulator's electronically tunable property, the flux value of the circuit can be adjusted by changing the transconductance gain through the biasing current of the OTAs. In addition, the flux value can be tuned by changing the frequency of the input current signal. The input current-flux relationships, time responses, memory properties, etc. are simulated with the LTSPICE using 0.18 mu m TSMC CMOS process parameters to analyze the performance of the emulator circuit. Additionally, the proposed emulator is performed experimentally using the circuit components OPA860 and AD633.Öğe Extended Bandwidth Method on Symmetrical Operational Transconductance Amplifier and Filter Application(Soc Microelectronics, Electron Components Materials-Midem, 2021) Konal, Mustafa; Kaçar, FıratIn this paper, a method for extending the bandwidth of a symmetrical operational transconductance amplifier (OTA) circuit is proposed. Resistive compensation technique is applied to all current mirrors of the symmetrical OTA circuit. A passive resistor is connected between the gate and the drain of each primary transistor of the current mirrors in the symmetrical OTA structure. The performance of the proposed OTA with extended transconductance bandwidth is analyzed by implementing filter structures. The advantage of using the resistive compensation technique is demonstrated. The proposed symmetrical OTA and the filters are simulated with LTSPICE by using TSMC 0.18 mu m CMOS process parameters.Öğe Grounded inductance simulator realization with single VDDDA(Springer, 2022) Konal, Mustafa; Kaçar, FıratIn this paper, a grounded inductance simulator circuit employing single voltage differencing differential difference amplifier (VDDDA) and a grounded capacitor is proposed. The purpose of this paper is to present an inductance simulator using minimum number of active and passive components. Due to the use of grounded capacitor in the proposed inductance simulator, the circuit is suitable for analog integrated circuit implementations. The circuit does not require any conditions of component matching. Furthermore, the presented circuit has electronically tunability property through changing the biasing current of the VDDDA. Inductance value of the circuit is analyzed for different biasing current values and at various temperatures. Additionally, in order to analyze the performance of the inductance simulator circuit, it is used in a second-order multifunction filter and third-order high pass filter structures. Noise voltage, frequency response, time domain response and total harmonic distortion analyzes are simulated for the filters. The simulation results of the proposed inductance simulator and filter circuits are verified and demonstrated with LTSPICE by using 0.18 µm TSMC CMOS process parameters. © 2021, The Author(s), under exclusive licence to Springer Science+Business Media, LLC, part of Springer Nature.Öğe Memcapacitor Emulator Based on Voltage Differencing Buffered Amplifiers(Taylor & Francis Ltd, 2025) Konal, Mustafa; Kacar, FiratThe advent of memristors has significantly increased research interest in memelements, leading to the development of various memcapacitor emulator circuits. In this study, we present a memcapacitor emulator circuit based on a fully balanced voltage differencing buffered amplifier (FB-VDBA), that demonstrates improved tunability and adaptability. The proposed emulator consists of two-stage configuration, where the second stage is a VDBA memristor. The VDBA memristor is transformed into a memcapacitor emulator, while the first stage acts as a VDBA active element circuit-based mutator. This memcapacitor emulator incorporates two VDBAs, two capacitors, and a resistor, enabling direct charge control through capacitor adjustments in the mutator stage. Furthermore, the emulator can operate across varying frequencies from 10 Hz to 10 kHz by modifying the capacitor in the memristor stage. Our results reveal that the emulator effectively supports an associative learning circuit, illustrating its potential for practical applications. The analysis of the non-ideal model is provided, highlighting the impact of parasitic impedances on circuit performance. Comprehensive PVT (Process, Voltage, and Temperature) analyses confirm the emulator's robustness under diverse conditions. The memcapacitor circuit demonstrated reliable performance with a +/- 10% variation in the VDBA supply voltages, as well as under extreme temperatures ranging from -50 degrees C to 100 degrees C. Simulations conducted using LTSpice with TSMC 0.18 mu m CMOS process parameters reveal precise time responses, voltage-charge relationships, and memory properties, emphasizing the circuit's suitability for advanced memory applications.Öğe Modelling of High Frequency Converter Transformer with Floating Active Inductor(Kaunas Univ Technology, 2018) Konal, Mustafa; Gulbahce, Mehmet Onur; Uzunoglu, Cengiz Polat; Kaçar, FıratAs number of digital electronics and power electronics based devices has risen recently, the fields of application for high frequency transformers have been increased. Aircraft industry, solar converters, electric drives, medical imaging systems and similar applications contain high frequency transformer operations. To express proper operation of transformers, equivalent circuit based analysis is conducted for typical transformers in which circuit parameters obtained. Rather than a conventional equivalent circuit analysis, a delicate analysis based on novel floating active inductor employed equivalent circuit is proposed for modelling of high frequency transformer characteristics. In this study, high frequency operated 2500 W 311 V/200 V transformer is investigated for frequency spectrum between 20 kHz and 200 kHz. Measured characteristics of investigated transformer are compared with the characteristics of proposed equivalent circuit. Proposed floating active inductor is designed with MOSFETs and can be tuned for wide frequency spectrum adaptively. In addition, proposed equivalent circuit is capable of modelling various high frequency transformers for different frequency values.Öğe Mutator Circuit for Memcapacitor Emulator Using Operational Transconductance Amplifiers(Kaunas Univ Technology, 2024) Konal, Mustafa; Kacar, Firatrecent years, interest in memelements, including memcapacitors, has increased significantly following the realisation of memristors. This paper presents the design and implementation of a memcapacitor circuit based on operational transconductance amplifiers (OTAs). The proposed design is structured as a mutator circuit, where the second stage functions as a memristor, ultimately transforming the circuit into a memcapacitor emulator. The emulator features electronic tunability, which allows the charge value of the memcapacitor to be adjusted by modifying the capacitor in the mutator stage. The charge value of the memcapacitor can also be adjusted by varying the transconductance gm value of the OTA active element. Additionally, the operational frequency of the memcapacitor can be varied by altering the capacitor in the second stage. An adaptive learning circuit based on the memcapacitor emulator is demonstrated to validate the circuit performance. The time response obtained when a sine signal is applied to the memcapacitor circuit, the input voltage-charge relationship, and the charge-time response obtained when a square wave is used to demonstrate its memory characteristics are provided. All simulations were conducted using LTSpice 0.18 mu m complementary metal oxide semiconductor (CMOS) process parameters. The results corroborate the effectiveness of the circuit, highlighting its potential for advanced electronic applications.Öğe Neuron Circuit Based on CCII-(IEEE, 2018) Babacan, Yunus; Yeşil, Abdullah; Konal, Mustafa; Kaçar, FıratCurrent-mode active components provide linearity, wider bandwidth, and low power dissipation. Current conveyors which are a type of current mode active elements find large application area in circuit designs. In this paper, we present a novel neuron circuit based on a negative-type second-generation current conveyor (CCII-). The circuit consists of only one CCII- and five MOS transistors and capable of generating fast-spiking firing behavior. Two transistors of them are used as capacitors in proposed neuron circuit. All simulation results are obtained as expected. The presented only-MOS based neuron circuit is compatible with VLSI systems.Öğe Realization of Grounded Active Inductor Circuit with Only MOSFETs(Amer Scientific Publishers, 2019) Konal, Mustafa; Yeşil, Abdullah; Kaçar, FıratIn this paper, a grounded MOS only active inductor circuit is presented. The grounded active inductor circuit has a minimum number of MOS transistors. As a result, this presented active inductor circuit provides small chip area and low power consumption as 315 mu W. Also, the proposed circuit has tunability property and the active inductor can operate in a wide frequency range between 10 MHz to 500 MHz. To analyze the performance of the proposed grounded active inductor, a second-order notch filter structure is realized. The center frequency of the notch filter is selected as 200 MHz and the noise voltage value is calculated as 8.37 nV/root Hz for this frequency. The designed active inductor and filter structures are simulated by LTSPICE using 0.18 mu m CMOS process parameters.Öğe Voltage Differencing Buffered Amplifier Realisation Using 32 nm FinFET Technology and Universal Filter Applications(Kaunas Univ Technology, 2024) Yagci, Sevda Altan; Konal, Mustafa; Kacar, Firatpaper presents high-frequency universal filter applications based on a voltage differential buffered amplifier (VDBA) using 32 nm fin field effect transistor (FinFET) technology. FinFET technology is a promising alternative to technology to avoid the problems caused by the decrease in transistor size as the technology evolves. In addition to the manufacturing process being similar to CMOS technology, FinFET technology offers many advantages, such as reduced short channel effects, higher drain current, reduced static leakage current, faster switching time, lower supply voltage, lower power consumption, and higher efficiency. The VDBA active circuit block, which has high input impedance and low output impedance, is preferred for high-frequency and highbandwidth applications. It is advantageous to design active filter circuits using VDBA because of its superior features, such as lower power consumption, higher bandwidth, wider range linearity, and the ability to implement the proposed circuits without external resistors. In this study, FinFET-based VDBA and filter application are simulated with the Spice simulation compared with those using 0.18 mu m TSMC technology. It is consumption by 98.8 % and increases bandwidth by 145 times. The successful results show that FinFET technology is superior to CMOS technology in analogue circuit design. FinFET-based VDBA circuits and filters will be more advantageous in the design of signal processing and biomedical applications.
