Yazar "Kazmanli, K." seçeneğine göre listele

Listeleniyor 1 - 2 / 2
  • Küçük Resim
    Öğe
    Investigation of structural and electrical properties of flat a-Si/c-Si heterostructure fabricated by EBPVD technique
    (American Institute of Physics Inc., 2013) Demiroğlu, Dilek; Tatar, Beyhan; Kazmanli, K.; Ürgen, Mustafa
    Flat amorphous silicon - crystal silicon (a-Si/c-Si) heterostructure were prepared by ultra-high vacuum electron beam evaporation technique on p-Si (111) and n-Si (100) single crystal substrates. Structural analyses were investigated by XRD, Raman and FEG-SEM analysis. With these analyses we determined that at the least amorphous structure shows modification but amorphous structure just protected. The electrical and photovoltaic properties of flat a-Si/c-Si heterojunction devices were investigated with current-voltage characteristics under dark and illumination conditions. Electrical properties of flat a-Si/c-Si heterorojunction; such as barrier height ? B , diode ideality factor ? were determined from current-voltage characteristics in dark conditions. These a-Si/c-Si heterostructure have good rectification behavior as a diode and exhibit high photovoltaic sensitivity. © 2013 AIP Publishing LLC.
  • Küçük Resim
    Öğe
    Structural and photovoltaic properties of a-Si (SNc)/c-Si heterojunction fabricated by EBPVD technique
    (American Institute of Physics Inc., 2013) Demiroğlu, Dilek; Tatar, Beyhan; Kazmanli, K.; Ürgen, Mustafa
    In last two decades sculptured thin films are very attractive for researches. Some properties of these thin films, like high porosity correspondingly high large surface area, controlled morphology; bring into prominence on them. Sculptured thin films have wide application areas as electronics, optics, mechanics, magnetic and chemistry. Slanted nano-columnar (SnC) thin films are a type of sculptured thin films. In this investigation SnC thin films were growth on n-type crystalline Si(100) and p-type crystalline Si(111) via ultra-high vacuum electron beam evaporation technique. The structural and morphological properties of the amorphous silicon thin films were investigated by XRD, Raman and FE-SEM analysis. According to the XRD and Raman analysis the structure of thin film was amorphous and FE-SEM analysis indicated slanted nano-columns were formed smoothly. Slanted nano-columns a-Si/c-Si heterojunction were prepared as using a photovoltaic device. In this regard we were researched photovoltaic properties of these heterojunction with current-voltage characterization under dark and illumination conditions. Electrical parameters were determined from the current-voltage characteristic in the dark conditions zero-bias barrier height ? B0 =0.83-1.00eV; diode ideality factor ?=11.71-10.73; series resistance R s =260-31.1 k? and shunt resistance R sh =25.71-63.5 M? SnC a-Si/n-Si and SnC a-Si/p-Si heterojunctions shows a pretty good photovoltaic behavior about 10 3 - 10 4 times. The obtained photovoltaic parameters are such as short circuit current density J sc 83-40 mA/m 2 , open circuit voltage V oc 900-831 mV. © 2013 AIP Publishing LLC.