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    Structural and optical properties of pure ZnO and Al/Cu co-doped ZnO semiconductor thin films and electrical characterization of photodiodes
    (Walter De Gruyter Gmbh, 2021) Demirbilek, Nihat; Yakuphanoğlu, Fahrettin; Kaya, Mehmet
    Nano-structured semiconductor thin films and p-type Si photodiodes were fabricated with the sol-gel spin coating technique using pure ZnO and co-doped. ZnO:Al-x:Cu-y with x = 1 at.-%, y = 1, 2, 3, 5 at.-%. The structural and optical properties of thin films were examined using an XRD and a UV-spectrophotometer. The thin films have a hexagonal wurtzite crystal structure, and their optical band gap energies decrease with increasing Cu contribution. The electrical properties of photodiodes were assessed via I-V, C-V, (G/co)-V and phototransient current (14, C-t) measurements. The Phi(b(I-V)), experimental zero-bias barrier height, rectification ratio, ideality factor and I-on/I-off parameters of the diodes were calculated using thermoionic emission model. In addition, Phi(b(C-V)), barrier height, V-bi, built:-in voltage, V-d, diffusion potential, N-d, donor concentration and W-d, depletion layer width of p-SignO:Al-x:Cu-y (x = 1 at.-%, y = 1 at.-%.) photodiodes were obtained using a C-2-V graph plotted at 1 MHz frequency. The photodiodes exhibit rectifying and photosensitive behaviors, and their reverse bias current increases with increasing light intensity. These results indicate that produced diodes can be employed as photodiodes or photosensors in optoelectronic circuits and electronic devices.
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    The Optical and Structural Properties of Undoped ZnO and Co-doped ZnO:Alx:Cdy x = 1 at %, y = 1, 2, 3, 5 at % Thin Films, and Their Electrical Characteristics as Photodiode
    (Pleiades journals, 2021) Demirbilek, Nihat; Yakuphanoğlu, Fahrettin; Kaya, Mehmet
    Abstract: ZnO semiconductor thin films with and without Al/Cd additives were produced with sol–gel spin coating technique. Also, photodiodes with and without Al/Cd additives were prepared using the same method. The structural properties of thin films produced were examined with SEM and XRD. Optical properties were tested using UV spectrophotometer, and band gap energies of the films were analyzed using absorbance values obtained. It was observed that the films had hexagonal wurtzite crystal structure, and their band gap energies reduce with increasing amount of Cd added. The electrical characterizations of photodiodes were analyzed with phototransient current (I-t, C-t), current-voltage (I-V), capacitance-voltage (C-V) and conductance-voltage (G/w-V) measurements. The barrier height and ideality factor parameters of the diodes were calculated using thermoionic emission model. The photodiodes exhibited photosensitive behavior, and it was seen that reverse bias current raised due to raising the light intensity. The results demonstrated that the produced diodes can be used as photodiodes or photosensors in optoelectronic implementation. © 2021, Pleiades Publishing, Ltd.