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dc.contributor.authorFırat, Y. E.
dc.contributor.authorYıldırım, H.
dc.contributor.authorErtürk, Kadir
dc.contributor.authorPeksoz, A.
dc.date.accessioned2022-05-11T14:29:33Z
dc.date.available2022-05-11T14:29:33Z
dc.date.issued2017
dc.identifier.issn0161-0457
dc.identifier.issn1932-8745
dc.identifier.urihttps://doi.org/10.1155/2017/2625132
dc.identifier.urihttps://hdl.handle.net/20.500.11776/7035
dc.description.abstractPolycrystalline copper sulphide (CuxS) thin films were grown by ultrasonic spray pyrolysis method using aqueous solutions of copper chloride and thiourea without any complexing agent at various substrate temperatures of 240, 280, and 320 degrees C. The films were characterized for their structural, optical, and electrical properties by X-ray diffraction (XRD), scanning electron microscopy (SEM), energy dispersive analysis of X-rays (EDAX), atomic force microscopy (AFM), contact angle (CA), optical absorption, and current-voltage (I-V) measurements. The XRD analysis showed that the films had single or mixed phase polycrystalline nature with a hexagonal covellite and cubic digenite structure. The crystalline phase of the films changed depending on the substrate temperature. The optical band gaps (E-g) of thin films were 2.07 eV (CuS), 2.50 eV (Cu1.765S), and 2.28 eV (Cu1.765S-Cu2S). AFM results indicated that the films had spherical nanosized particles well adhered to the substrate. Contact angle measurements showed that the thin films had hydrophobic nature. Hall effect measurements of all the deposited CuxS thin films demonstrated them to be of p-type conductivity, and the current-voltage (I-V) dark curves exhibited linear variation.en_US
dc.description.sponsorshipUludag UniversityUludag University [OUAP(F)-2013/11]; Uludag UniversityUludag Universityen_US
dc.description.sponsorshipThis work was supported by the Research Fund of Uludag University Project no. OUAP(F)-2013/11. The authors would like to thank Uludag University for financial support. The authors wish to thank Assoc. Professor Dr. Salih Kose of Osmangazi University (Turkey) for allowing the use of ultrasonic chemical spray pyrolysis system in semiconductor film production laboratory.en_US
dc.language.isoengen_US
dc.publisherWiley-Hindawien_US
dc.identifier.doi10.1155/2017/2625132
dc.rightsinfo:eu-repo/semantics/openAccessen_US
dc.subjectCuxsen_US
dc.subjectGrowthen_US
dc.subjectIonsen_US
dc.titleUltrasonic Spray Pyrolysis Deposited Copper Sulphide Thin Films for Solar Cell Applicationsen_US
dc.typearticleen_US
dc.relation.ispartofScanningen_US
dc.departmentFakülteler, Fen Edebiyat Fakültesi, Fizik Bölümüen_US
dc.authorid0000-0001-6552-1112
dc.authorid0000-0003-0510-6640
dc.institutionauthorErtürk, Kadir
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.authorscopusid57188820368
dc.authorscopusid57222249173
dc.authorscopusid18036952100
dc.authorscopusid23100976500
dc.authorwosidyıldırım, hasan/A-8113-2016
dc.authorwosidFırat, Yunus Emre/AAK-5283-2021
dc.authorwosidERTÜRK, KADİR/ABA-5148-2020
dc.authorwosidPEKSÖZ, AHMET/AAG-9772-2021
dc.identifier.wosWOS:000394015500001en_US
dc.identifier.scopus2-s2.0-85029389810en_US


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