Temperature dependence of electrical properties in In/Cu 2 ZnSnTe 4 /Si/Ag diodes
Özet
Cu 2 ZnSnTe 4 (CZTTe) thin films with In metal contact were deposited by thermal evaporation on monocrystalline n-type Si wafers with Ag ohmic contact to investigate the device characteristics of an In/CZTTe/Si/Ag diode. The variation in electrical characteristics of the diode was analysed by carrying out current–voltage (I–V) measurements in the temperature range of 220–360 K. The forward bias I–V behaviour was modelled according to the thermionic emission (TE) theory to obtain main diode parameters. In addition, the experimental data were detailed by taking into account the presence of an interfacial layer and possible dominant current transport mechanisms were studied under analysis of ideality factor, n. Strong effects of temperature were observed on zero-bias barrier height (? B 0 ) and n values due to barrier height inhomogeneity at the interface. The anomaly observed in the analysis of TE was modelled by Gaussian distribution (GD) of barrier heights with 0.844 eV mean barrier height and 0.132 V standard deviation. According to the Tung’s theoretical approach, a linear correlation between ? B 0 and n cannot be satisfied, and thus the modified Richardson plot was used to determine Richardson constant (A ? ). As a result, A ? was calculated approximately as 120.6Acm-2K-2 very close to the theoretical value for n-Si. In addition, the effects of series resistance (R s ) by estimating from Cheng’s function and density of surface states (N ss ) by taking the bias dependence of effective barrier height, were discussed. © 2019, Indian Academy of Sciences.
Cilt
42Sayı
2Koleksiyonlar
İlgili Öğeler
Başlık, yazar, küratör ve konuya göre gösterilen ilgili öğeler.
-
Temperature dependence of band gaps in sputtered SnSe thin films
Delice, S.; Işık, M.; Güllü, H. H.; Terlemezoğlu, Makbule; Bayraklı Sürücü, Özge; Parlak, Mehmet; Gasanly, Nizami Mamed (Elsevier Ltd, 2019)Temperature-dependent transmission experiments were performed for tin selenide (SnSe) thin films deposited by rf magnetron sputtering method in between 10 and 300 K and in the wavelength region of 400–1000 nm. Transmission ... -
Construction of self-assembled vertical nanoflakes on CZTSSe thin films
Terlemezoğlu, Makbule; Bayraklı Sürücü, Özge; Çolako?lu, Tahir; Abak, Musa Kurtuluş; Güllü, Hasan Hüseyin; Erçelebi, Çiğdem; Parlak, Mehmet (Institute of Physics Publishing, 2019)Cu2ZnSn(S, Se)4 (CZTSSe) is a promising alternative absorber material to achieve high power conversion efficiencies, besides its property of involving low-cost and earth-abundant elements when compared to Cu(In, Ga)Se2 ... -
Temperature-dependent material characterization of CuZnSe2 thin films
Güllü, H. H.; Surucu, O.; Terlemezoğlu, Makbule; Işık, M.; Ercelebi, C.; Gasanly, Nizami Mamed; Parlak, Mehmet (Elsevier B.V., 2020)In the present work, CuZnSe2 (CZSe) thin films were co-deposited by magnetron sputtering of ZnSe and Cu targets. The structural analyses resulted in the stoichiometric elemental composition and polycrystalline nature without ...