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Correlation of DC and AC electrical properties of Al/p-Si structure by I-V-T and C(G/omega)-V-T measurements
(Elsevier Sci Ltd, 2009)
Current-voltage-temperature and admittance-gate bias-temperature measurements were performed on Al/p-Si structure to investigate transport and storage properties. In forward direction of former measurement, three distinct ...
Temperature dependence of electrical characteristics of Cr/p-Si(100) Schottky barrier diodes
(World Scientific Publ Co Pte Ltd, 2008)
The electrical characteristics of Cr/p-Si(100) Schottky barrier diodes have been measured in the temperature range of 100-300 K. The I-V analysis based on thermionic emission (TE) theory has revealed an abnormal decrease ...
Electrical, structural and morphological properties of Ni/n-Si contacts
(Natl Inst Optoelectronics, 2009)
This paper presents structural, morphological and electrical properties of Ni/n-Si contacts formed by electro-deposition technique. Ni film is deposited on n-type Si (100) substrate using 2 mol/L Nickel Sulphamate, 0.5 ...