| dc.contributor.author | Demiroğlu, Dilek | |
| dc.contributor.author | Tatar, Beyhan | |
| dc.contributor.author | Kazmanli, K. | |
| dc.contributor.author | Ürgen, Mustafa | |
| dc.date.accessioned | 2022-05-11T14:29:30Z | |
| dc.date.available | 2022-05-11T14:29:30Z | |
| dc.date.issued | 2013 | |
| dc.identifier.isbn | 9780735411975 | |
| dc.identifier.issn | 0094-243X | |
| dc.identifier.uri | https://doi.org/10.1063/1.4849249 | |
| dc.identifier.uri | https://hdl.handle.net/20.500.11776/7005 | |
| dc.description | Doga Nanobiotech Inc.;Mega Technology Services Inc. | en_US |
| dc.description | 3rd International Advances in Applied Physics and Materials Science Congress, APMAS 2013 -- 24 April 2013 through 28 April 2013 -- -- 111830 | en_US |
| dc.description.abstract | Flat amorphous silicon - crystal silicon (a-Si/c-Si) heterostructure were prepared by ultra-high vacuum electron beam evaporation technique on p-Si (111) and n-Si (100) single crystal substrates. Structural analyses were investigated by XRD, Raman and FEG-SEM analysis. With these analyses we determined that at the least amorphous structure shows modification but amorphous structure just protected. The electrical and photovoltaic properties of flat a-Si/c-Si heterojunction devices were investigated with current-voltage characteristics under dark and illumination conditions. Electrical properties of flat a-Si/c-Si heterorojunction; such as barrier height ? B , diode ideality factor ? were determined from current-voltage characteristics in dark conditions. These a-Si/c-Si heterostructure have good rectification behavior as a diode and exhibit high photovoltaic sensitivity. © 2013 AIP Publishing LLC. | en_US |
| dc.language.iso | eng | en_US |
| dc.publisher | American Institute of Physics Inc. | en_US |
| dc.identifier.doi | 10.1063/1.4849249 | |
| dc.rights | info:eu-repo/semantics/closedAccess | en_US |
| dc.subject | Amorphous silicon | en_US |
| dc.subject | e-beam evaporation technique | en_US |
| dc.subject | electrical properties | en_US |
| dc.title | Investigation of structural and electrical properties of flat a-Si/c-Si heterostructure fabricated by EBPVD technique | en_US |
| dc.type | conferencePaper | en_US |
| dc.relation.ispartof | AIP Conference Proceedings | en_US |
| dc.department | Fakülteler, Fen Edebiyat Fakültesi, Fizik Bölümü | en_US |
| dc.identifier.volume | 1569 | en_US |
| dc.identifier.startpage | 158 | en_US |
| dc.identifier.endpage | 161 | en_US |
| dc.institutionauthor | Tatar, Beyhan | |
| dc.relation.publicationcategory | Konferans Öğesi - Uluslararası - Kurum Öğretim Elemanı | en_US |
| dc.authorscopusid | 57200995971 | |
| dc.authorscopusid | 18042707800 | |
| dc.authorscopusid | 6506767312 | |
| dc.authorscopusid | 7003971869 | |
| dc.identifier.scopus | 2-s2.0-84942855737 | en_US |
