dc.contributor.author | Menda, Ugur Deneb | |
dc.contributor.author | Özdemir, Orhan | |
dc.contributor.author | Tatar, Beyhan | |
dc.contributor.author | Ürgen, Mustafa | |
dc.contributor.author | Kutlu, Kubilay | |
dc.date.accessioned | 2022-05-11T14:29:29Z | |
dc.date.available | 2022-05-11T14:29:29Z | |
dc.date.issued | 2010 | |
dc.identifier.issn | 1369-8001 | |
dc.identifier.issn | 1873-4081 | |
dc.identifier.uri | https://doi.org/10.1016/j.mssp.2010.12.002 | |
dc.identifier.uri | https://hdl.handle.net/20.500.11776/6996 | |
dc.description.abstract | p-CrSi2/n-crystSi and p-CrSi2/p-crystSi hetero junctions produced by cathodic arc physical vapor deposition were worked out by means of capacitance-voltage-temperature (C-V-T) and current-voltage-temperature (I-V-T) measurements to investigate storage and transport properties. Former measurement on p-CrSi2/n-crystSi structure confirmed an abrupt type junction together with a building voltage at the proximity of 0.7 V. Though a fairly well rectification ratio (10(3) at +/- 2 V) was realized by I-V measurement, it became deteriorated with the increase in ambient temperature. From temperature dependence of I-V variations, distinct conduction mechanisms were identified. In forward (reverse) direction trap assisted single-multistep tunneling recombination (generation) and space-charge limited current flow that corresponded to low and high bias voltage regions, respectively, were identified. Moreover, an activation energy (E-A) determined from the slopes of I-V-T curves as 0.22 and 0.26 eV was interpreted as the energy position of a chromium-boron (Cr-B) complex-type point defect residing in n/p doped c-Si semiconductor in CrSi2/n-c-Si and CrSi2/p-c-Si junctions. The retrieved E-A was in agreement with the recent DLTS measurement. Based on the experimental observations, schematic current path was built to interpret I-V/C-V behaviors. The model was successful in explaining the decrease in measured capacitance under large forward bias voltage reported for the first time by us for the present CrSi2/Si junctions. (C) 2010 Elsevier Ltd. All rights reserved. | en_US |
dc.language.iso | eng | en_US |
dc.publisher | Elsevier Sci Ltd | en_US |
dc.identifier.doi | 10.1016/j.mssp.2010.12.002 | |
dc.rights | info:eu-repo/semantics/closedAccess | en_US |
dc.subject | Electrical properties | en_US |
dc.subject | Current mechanisms | en_US |
dc.subject | Activation energy | en_US |
dc.subject | Cr-B complex | en_US |
dc.subject | Chromium silicides | en_US |
dc.subject | Electrical-Transport | en_US |
dc.subject | Schottky Structures | en_US |
dc.subject | Films | en_US |
dc.title | Transport and storage properties of CrSi2/Si junctions made using the CAPVD technique | en_US |
dc.type | article | en_US |
dc.relation.ispartof | Materials Science in Semiconductor Processing | en_US |
dc.department | Fakülteler, Fen Edebiyat Fakültesi, Fizik Bölümü | en_US |
dc.authorid | 0000-0003-3549-0049 | |
dc.authorid | 0000-0002-7733-8929 | |
dc.identifier.volume | 13 | en_US |
dc.identifier.issue | 4 | en_US |
dc.identifier.startpage | 257 | en_US |
dc.identifier.endpage | 266 | en_US |
dc.institutionauthor | Tatar, Beyhan | |
dc.relation.publicationcategory | Makale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı | en_US |
dc.authorwosid | Urgen, Mustafa/D-5422-2014 | |
dc.authorwosid | Tatar, Beyhan/ABA-6195-2020 | |
dc.authorwosid | Menda, Ugur Deneb/AAJ-7680-2020 | |
dc.identifier.wos | WOS:000289134900006 | en_US |