Güncel Gönderiler: Fen Edebiyat Fakültesi Koleksiyonu
Toplam kayıt 1212, listelenen: 701-720
-
Static Weyl type solutions of the Brans-Dicke theory
(American Institute of Physics Inc., 2016)Static, axially symmetric Weyl type solutions and their properties are studied in the Brans-Dicke (BD) theory. The new solutions are obtained for the general Weyl solutions, two particle Chazy-Curzon solution and ... -
2D Finite Element Analysis of Pinning Induced Stress in HTS Power Transmission Cables Made of 2G Superconducting Tapes with and without Magnetic Substrate
(IEEE-Inst Electrical Electronics Engineers Inc, 2016)In a two-layer superconducting cable, we numerically investigated the effect of magnetic properties and alignment of the substrates of the tapes on the stress distribution induced by a very high transported electric current. ... -
Binding energy of 2p-bound state of a hydrogenic donor impurity in a GaAs/Ga1-xAlxAs spherical quantum dot under hydrostatic pressure
(Elsevier, 2014)By using a variational procedure within the effective mass approximation, we calculated the 2p state binding energy, E-2pha(x,P), and the binding energy turning point, R-2pEbT (X, P) of a hydrogenic donor impurity located ... -
Stationary axially symmetric solutions in Brans-Dicke theory
(Amer Physical Soc, 2015)Stationary, axially symmetric Brans-Dicke-Maxwell solutions are reexamined in the framework of the Brans-Dicke (BD) theory. We see that, employing a particular parametrization of the standard axially symmetric metric ... -
Improvement in electrical and photovoltaic properties of a-Si/c-Si heterojunction with slanted nano-columnar amorphous silicon thin films for photovoltaic applications
(Elsevier Science Bv, 2015)The flat a-Si and slanted nanocolumnar (S-nC) a-Si thin films were prepared on c-Si and corning glass substrates by e-beam physical vapor deposition (EB-PVD) technique. The structural properties of all the grown thin films ... -
Investigation of structural and electrical properties of p-CuPc/c-Si and p-CuPc/a-Si/c-Si hybrid photodiodes prepared by CSP technique
(Elsevier Science Bv, 2014)To produce p-CuPc/c-Si and p-CuPc/a-Si/c-Si heterojunctions, at first, amorphous silicon thin film was deposited on p-Si (111) and n-Si (100) single crystalline substrates by high vacuum electron beam evaporation technique. ... -
Electrical properties of FePc organic semiconductor thin films obtained by CSP technique for photovoltaic applications
(Elsevier Sci Ltd, 2015)Iron-phthalocyanine (FePc) organic semiconductor thin films were prepared on Corning glass and c-Si substrates at a substrate temperature of 150 degrees C by a chemical spray pyrolysis (CSP) technique. The structural ... -
Brans-Dicke-Maxwell solutions for higher dimensional static cylindrical symmetric spacetime
(Amer Inst Physics, 2015)In this paper, Brans-Dicke-Maxwell type vacuum solutions are considered for a static cylindrically symmetric spacetime in arbitrary dimensions. Exact solutions are obtained by directly solving the field equations for the ... -
Generalized Morse wavelets for the phase evaluation of projected fringe pattern
(Iop Publishing Ltd, 2014)Generalized Morse wavelets are proposed to evaluate the phase information from projected fringe pattern with the spatial carrier frequency in the x direction. The height profile of the object is determined through the phase ... -
Generalized Morse wavelet for the determination of the birefringence of a liquid crystal cell
(Iop Publishing Ltd, 2015)The generalized Morse wavelet (GMW) was improved as an alternative tool to determine the birefringence dispersion of a liquid crystal (LC) material by using the transmittance spectrum. The GMW has two degrees of freedom ... -
The influence of Er3+ doping on the structural and optical properties of CeO2 thin films grown by PED
(Elsevier Science Bv, 2013)Erbium doped CeO2 thin films were deposited on both Corning glass substrates and indium doped tin oxide (ITO) coated glass substrates by pulsed e-beam deposition (PED) method at room temperature. Structural features of Er ... -
Higher dimensional cylindrical or Kasner type electrovacuum solutions
(Springer/Plenum Publishers, 2013)We consider a dimensional Kasner type diagonal spacetime where metric functions depend only on a single coordinate and electromagnetic field shares the symmetries of spacetime. These solutions can describe static cylindrical ... -
Ab initio study on the rare-earth iron-pnictides RFeAsO (R = Pr, Nd, Sm, Gd) in the low-temperature Cmma phase
(Iop Publishing Ltd, 2014)We present density functional theory calculations on the iron-based pnictides RFeAsO (R = Pr, Nd, Sm, Gd). The calculations have been carried out using plane waves and the projector augmented wave (PAW) pseudopotential ... -
Structure and photovoltaic properties of Ag/p-CuPc/a-Si/c-Si/Ag organic-inorganic hybrid heterojunction fabricated by chemical spray pyrolysis technique
(Elsevier Science Bv, 2013)This investigation refers to the fabrication of an organic-inorganic hybrid heterojunction photovoltaic device. Heterojunctions PV devices were fabricated by growing p-type organic CuPc films onto inorganic amorphous silicon ... -
The diamagnetic susceptibility of hydrogenic donor in two-dimensional semiconductors with anisotropic effective mass of carriers
(Academic Press Ltd- Elsevier Science Ltd, 2012)In this study, the effects of quantum confinement and effective mass anisotropy parameter on the diamagnetic susceptibility of a hydrogenic donor placed in GaAs. Si, and Ge quantum wells with infinite confinement potential ... -
Low temperature crystallization of amorphous silicon by gold nanoparticle
(Elsevier, 2013)Single crystalline Si thin film fabricated on glass substrate by a process called Solid Phase Crystallization (SPC) is highly desirable for the development of high efficiency and low cost thin film solar cells. However, ... -
Investigation of structural and electrical properties of flat a-Si/c-Si heterostructure fabricated by EBPVD technique
(American Institute of Physics Inc., 2013)Flat amorphous silicon - crystal silicon (a-Si/c-Si) heterostructure were prepared by ultra-high vacuum electron beam evaporation technique on p-Si (111) and n-Si (100) single crystal substrates. Structural analyses were ... -
Structural and photovoltaic properties of a-Si (SNc)/c-Si heterojunction fabricated by EBPVD technique
(American Institute of Physics Inc., 2013)In last two decades sculptured thin films are very attractive for researches. Some properties of these thin films, like high porosity correspondingly high large surface area, controlled morphology; bring into prominence ... -
Transport and storage properties of CrSi2/Si junctions made using the CAPVD technique
(Elsevier Sci Ltd, 2010)p-CrSi2/n-crystSi and p-CrSi2/p-crystSi hetero junctions produced by cathodic arc physical vapor deposition were worked out by means of capacitance-voltage-temperature (C-V-T) and current-voltage-temperature (I-V-T) ... -
Excess Capacitance Due to Minority Carrier Injection in CrSi2/p-Type Crystalline Si Isotype Junction
(Iop Publishing Ltd, 2010)Excess current and capacitance phenonema were observed for the first time on a CrSi2/p-type crystalline silicon junction produced by cathodic arc physical vapor deposition. The heterojunction was investigated by ...