Ara
Toplam kayıt 20, listelenen: 1-10
Electrical characterization of CdZnTe/Si diode structure
(Springer, 2020)
Temperature-dependent current-voltage (I- V) , and frequency dependent capacitance-voltage (C- V) and conductance-voltage (G- V) measurements were performed in order to analyze characteristics of CdZnTe/Si structure. ...
Temperature-dependent material characterization of CuZnSe2 thin films
(Elsevier B.V., 2020)
In the present work, CuZnSe2 (CZSe) thin films were co-deposited by magnetron sputtering of ZnSe and Cu targets. The structural analyses resulted in the stoichiometric elemental composition and polycrystalline nature without ...
Material and Si-based diode analyses of sputtered ZnTe thin films
(Springer, 2020)
Structural, optical, and electrical properties ZnTe thin films grown by magnetron sputtering technique were studied by X-ray diffraction, atomic force microscopy, Raman spectroscopy, and electrical conductivity measurements. ...
Temperature dependent band gap in SnS2xSe(2-2x) (x = 0.5) thin films
(Elsevier Ltd, 2020)
Structural and optical properties of SnS2xSe(2-2x) thin films grown by magnetron sputtering method were investigated for composition of x = 0.5 (SnSSe) in the present study. X-ray diffraction, energy dispersive X-ray ...
Characterization of Cu-rich and Zn-poor Cu2ZnSnS4 single crystal grown by vertical Bridgman technique
(Elsevier B.V., 2021)
To date, although a number of studies have focused on understanding the fundamental properties of Cu-poor/Zn-rich Cu2ZnSnS4 (CZTS) single crystals, little attention has been paid to investigate the physical properties of ...
Investigation of band gap energy versus temperature for SnS2 thin films grown by RF-magnetron sputtering
(Elsevier B.V., 2020)
SnS2 thin films grown by magnetron sputtering technique were characterized by structurally and optically in the present work. Crystalline parameters, atomic compositions, and surface characteristics of SnS2 thin films were ...
Temperature-tuned band gap properties of MoS2 thin films
(Elsevier B.V., 2020)
MoS2 is one of the fascinating members of transition metal dichalcogenides and has attracted great attention due to its various optoelectronic device applications and its characteristic as two-dimensional material. The ...
A Study on Tetragonal-star like Shaped Inverted Pyramid Texturing
(Institute of Electrical and Electronics Engineers Inc., 2021)
Surface texturing is one of the key process steps in solar cell fabrication. For an ideal surface texturing, surface recombination should be kept as low as possible while the light trapping property is improved. The formation ...
Illumination and voltage effects on the forward and reverse bias current-voltage (I-V) characteristics in In/In2S3/p-Si photodiodes
(Springer, 2021)
The illumination and voltage effects on the I-V measurements of the fabricated In/In2S3/p-Si photodiode were investigated in dark and under various illumination intensities (20–100 mW/cm2) between ± 2 V. Two linear regions ...
Growth and Characterization of Stoichiometric Cu2ZnSnS4 Crystal Using Vertical Bridgman Technique
(John Wiley and Sons Inc, 2022)
Stoichiometric Cu2ZnSnS4 (CZTS) single phase crystals are successfully grown in a single-zone vertical furnace by Bridgman technique. X-ray diffraction (XRD) and Raman spectroscopy measurements are employed to investigate ...