Ara
Toplam kayıt 740, listelenen: 1-10
Agricultural land suitability assessment for agricultural productivity based on GIS modeling and multi-criteria decision analysis: the case of Tekirdağ province
(Springer Science and Business Media Deutschland GmbH, 2022)
Grains play a significant role in meeting the nutritional needs of the increasing world population. Consequently, the need for new studies on agricultural production and land suitability assessments has increased. The ...
Characterization of CdS films and CdS/Si heterojunctions prepared by ultrasonic spray pyrolysis and their response to light
(Elsevier B.V., 2020)
In this work CdS thin films were deposited onto glass and p-Si substrates by ultrasonically spraying of precursor solutions prepared in molarity ranging from 0.025 M, to 0.1 M. Structural investigations revealed that all ...
Determination of current transport characteristics in Au-Cu/CuO/n-Si Schottky diodes
(Elsevier B.V., 2019)
In this study, the material properties of CuO thin films fabricated by sputtering technique and electrical properties of CuO/n-Si structure were reported. Temperature-dependent current-voltage (I-V) measurement was carried ...
Investigation of electrical characteristics of Ag/ZnO/Si sandwich structure
(Springer New York LLC, 2019)
In this study, temperature-dependent current–voltage (I–V), frequency-dependent capacitance–voltage (C–V) and conductance–voltage (G/ ?- V) measurements are carried out for the electrical characterization of a zinc oxide ...
Temperature dependence of band gaps in sputtered SnSe thin films
(Elsevier Ltd, 2019)
Temperature-dependent transmission experiments were performed for tin selenide (SnSe) thin films deposited by rf magnetron sputtering method in between 10 and 300 K and in the wavelength region of 400–1000 nm. Transmission ...
Temperature dependence of electrical properties in In/Cu 2 ZnSnTe 4 /Si/Ag diodes
(Indian Academy of Sciences, 2019)
Cu 2 ZnSnTe 4 (CZTTe) thin films with In metal contact were deposited by thermal evaporation on monocrystalline n-type Si wafers with Ag ohmic contact to investigate the device characteristics of an In/CZTTe/Si/Ag diode. ...
Frequency effect on electrical and dielectric characteristics of In/Cu 2 ZnSnTe 4 /Si/Ag diode structure
(Springer New York LLC, 2019)
In/Cu 2 ZnSnTe 4 /Si/Ag diode structure was fabricated by sputtering Cu 2 ZnSnTe 4 (CZTTe) thin film layer on the Si layer with In front contact. The frequency dependent room temperature capacitance and conductance ...
Electrical characterization of CdZnTe/Si diode structure
(Springer, 2020)
Temperature-dependent current-voltage (I- V) , and frequency dependent capacitance-voltage (C- V) and conductance-voltage (G- V) measurements were performed in order to analyze characteristics of CdZnTe/Si structure. ...
The zero order generalized Morse wavelet method to determine the refractive index and extinction coefficient dispersions of an absorbing film
(Elsevier B.V., 2019)
The zero order generalized Morse wavelet was proposed as a method to determine the refractive index and extinction coefficient dispersions of an absorbing thin film in the visible and near infrared regions at room temperature. ...
Simultaneous determination of the thickness and refractive index dispersion of dielectric films by the Paul wavelet transform
(Elsevier B.V., 2019)
The continuous wavelet transform with Paul wavelet was proposed as a method for the simultaneous determination of physical thickness and refractive index dispersion of dielectric films in the visible and near infrared ...