Güncel Gönderiler: Scopus İndeksli Yayınlar Koleksiyonu
Toplam kayıt 4328, listelenen: 2641-2660
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Ab initio study on the rare-earth iron-pnictides RFeAsO (R = Pr, Nd, Sm, Gd) in the low-temperature Cmma phase
(Iop Publishing Ltd, 2014)We present density functional theory calculations on the iron-based pnictides RFeAsO (R = Pr, Nd, Sm, Gd). The calculations have been carried out using plane waves and the projector augmented wave (PAW) pseudopotential ... -
Structure and photovoltaic properties of Ag/p-CuPc/a-Si/c-Si/Ag organic-inorganic hybrid heterojunction fabricated by chemical spray pyrolysis technique
(Elsevier Science Bv, 2013)This investigation refers to the fabrication of an organic-inorganic hybrid heterojunction photovoltaic device. Heterojunctions PV devices were fabricated by growing p-type organic CuPc films onto inorganic amorphous silicon ... -
The diamagnetic susceptibility of hydrogenic donor in two-dimensional semiconductors with anisotropic effective mass of carriers
(Academic Press Ltd- Elsevier Science Ltd, 2012)In this study, the effects of quantum confinement and effective mass anisotropy parameter on the diamagnetic susceptibility of a hydrogenic donor placed in GaAs. Si, and Ge quantum wells with infinite confinement potential ... -
Low temperature crystallization of amorphous silicon by gold nanoparticle
(Elsevier, 2013)Single crystalline Si thin film fabricated on glass substrate by a process called Solid Phase Crystallization (SPC) is highly desirable for the development of high efficiency and low cost thin film solar cells. However, ... -
Investigation of structural and electrical properties of flat a-Si/c-Si heterostructure fabricated by EBPVD technique
(American Institute of Physics Inc., 2013)Flat amorphous silicon - crystal silicon (a-Si/c-Si) heterostructure were prepared by ultra-high vacuum electron beam evaporation technique on p-Si (111) and n-Si (100) single crystal substrates. Structural analyses were ... -
Structural and photovoltaic properties of a-Si (SNc)/c-Si heterojunction fabricated by EBPVD technique
(American Institute of Physics Inc., 2013)In last two decades sculptured thin films are very attractive for researches. Some properties of these thin films, like high porosity correspondingly high large surface area, controlled morphology; bring into prominence ... -
Excess Capacitance Due to Minority Carrier Injection in CrSi2/p-Type Crystalline Si Isotype Junction
(Iop Publishing Ltd, 2010)Excess current and capacitance phenonema were observed for the first time on a CrSi2/p-type crystalline silicon junction produced by cathodic arc physical vapor deposition. The heterojunction was investigated by ... -
Characterization of vibrational and mechanical properties of quaternary compounds Cu2ZnSnS4 and Cu2ZnSnSe4 in kesterite and stannite structures
(Amer Physical Soc, 2011)In this paper, structural, elastic, and dynamical properties of Cu2ZnSnS4 and Cu2ZnSnSe4 are calculated for kesterite and stannite structures using the density functional and density functional perturbation theories. The ... -
Cylindrically symmetric vacuum solutions in higher dimensional Brans-Dicke theory
(Amer Inst Physics, 2010)Higher dimensional, static, cylindrically symmetric vacuum solutions with and without a cosmological constant in the Brans-Dicke theory are presented. We show that for a negative cosmological constant and for specific ... -
Two-Dimensional Fringe Projection for Three-Dimensional Shape Measurements by Using the CWT Phase Gradient Method
(Springer, 2011)This paper describes an optical measurement technique for the two-dimensional fringe pattern (by introducing the carrier frequencies in two spatial directions x and y) by the continuous wavelet transform (CWT) phase gradient ... -
Spectral properties of LiFeAs: An LDA plus DMFT study
(Maik Nauka/Interperiodica/Springer, 2012)Spectral properties of LiFeAs superconductor are investigated within the LDA+DMFT method. Calculated distribution of the spectral weight in the k-space is in good agreement with angle-resolved photoemission (ARPES) spectra. ... -
Effect of (Mo, W) substitution for Nb on glass forming ability and magnetic properties of Fe-Co-based bulk amorphous alloys fabricated by centrifugal casting
(Elsevier Science Sa, 2011)In this study, effects of simultaneous Mo and W substitution for Nb additions on the stability and magnetic properties of Fe-Co-based bulk metallic glass (BMG) alloys fabricated by centrifugal casting are investigated. The ... -
Growth, Electrical, and Optical Study of ZnS:Mn Thin Films
(Polish Acad Sciences Inst Physics, 2012)In this study, ZnS and Mn-incorporated (at 2%, 4%, and 6%) ZnS films were deposited onto glass substrates by ultrasonic spray pyrolysis technique, and the effect of Mn incorporation on the electrical and optical properties ... -
Effect of Thickness on Magnetic Properties of Fe36Co36B19.2Si4.8Mo2W2 Thin Film Prepared by Thermionic Vacuum Arc
(Polish Acad Sciences Inst Physics, 2012)Fe36Co36B19.2Si4.8Mo2W2 amorphous thin films have been produced by thermionic vacuum arc with thickness varying from 200 nm to 260 mn. X-ray diffraction has been employed to reveal a predominant amorphous phase in the ... -
Alternative approach for determination of energy band gap of semiconductors through electrical analysis
(2010)Traditional way of extracting energy band gap (EG) of semiconductors from UV-Visible transmisson measurement becomes difficult once EG lies below than 1 eV. Instead of optical excitation of electrons from valance to ... -
Ab initio lattice dynamics and thermodynamics of rare-earth hexaborides LaB6 and CeB6
(Amer Physical Soc, 2010)We have performed an ab initio study of structural, elastic, lattice-dynamical, and thermodynamical properties of rare-earth hexaborides LaB6 and CeB6. The calculations have been carried out within the density-functional ... -
Correlation of DC and AC electrical properties of Al/p-Si structure by I-V-T and C(G/omega)-V-T measurements
(Elsevier Sci Ltd, 2009)Current-voltage-temperature and admittance-gate bias-temperature measurements were performed on Al/p-Si structure to investigate transport and storage properties. In forward direction of former measurement, three distinct ... -
Temperature dependence of electrical characteristics of Cr/p-Si(100) Schottky barrier diodes
(World Scientific Publ Co Pte Ltd, 2008)The electrical characteristics of Cr/p-Si(100) Schottky barrier diodes have been measured in the temperature range of 100-300 K. The I-V analysis based on thermionic emission (TE) theory has revealed an abnormal decrease ... -
Electrical, structural and morphological properties of Ni/n-Si contacts
(Natl Inst Optoelectronics, 2009)This paper presents structural, morphological and electrical properties of Ni/n-Si contacts formed by electro-deposition technique. Ni film is deposited on n-type Si (100) substrate using 2 mol/L Nickel Sulphamate, 0.5 ... -
Land Use and Land Cover Changes (LULCC), a Key to Understand Soil Erosion Intensities in the Maritsa Basin
(Mdpi, 2018)Soil erosion is a major environmental and economic concern affecting all continents around the world. Soil loss facilitates land degradation, threatening both agricultural and natural environments in continental Europe. ...