Ara
Toplam kayıt 4310, listelenen: 51-60
Kinetic modelling and determination of octylphenol ethoxylate (OPE) and bisphenol A (BPA) (used as plastic additives) inhibition constants for nitrogen conversion
(Global Network Environmental Science & Technology, 2021)
Conversion of ammonia to nitrate is sensitive to a number of inhibitors. There is limited information on the nitrification inhibition coefficient and kinetic model in the current literature. Octyl Phenol Ethoxylate (OPE) ...
DTMOS based low-voltage low-power all-pass filter
(Springer, 2021)
In this paper, a voltage mode all-pass filter design employing floating current sources (FCS) is proposed. The presented all-pass filter circuit contains two floating current sources, one grounded resistor and one floating ...
Synthesis of CuFe2O4-Ti and CuFe2O4-Ti-GO nanocomposite photocatalysts using green-synthesized CuFe2O4: determination of photocatalytic activity, bacteria inactivation and antibiotic degradation potentials under visible light
(Wiley, 2022)
BACKGROUND Advanced oxidation processes (AOPs), specifically photocatalysis have gained an essential attraction in the field of micro pollutants degradation. Synthesis and use of proper photocatalysts for target pollutant ...
Characterization of CdS films and CdS/Si heterojunctions prepared by ultrasonic spray pyrolysis and their response to light
(Elsevier B.V., 2020)
In this work CdS thin films were deposited onto glass and p-Si substrates by ultrasonically spraying of precursor solutions prepared in molarity ranging from 0.025 M, to 0.1 M. Structural investigations revealed that all ...
Determination of current transport characteristics in Au-Cu/CuO/n-Si Schottky diodes
(Elsevier B.V., 2019)
In this study, the material properties of CuO thin films fabricated by sputtering technique and electrical properties of CuO/n-Si structure were reported. Temperature-dependent current-voltage (I-V) measurement was carried ...
Investigation of electrical characteristics of Ag/ZnO/Si sandwich structure
(Springer New York LLC, 2019)
In this study, temperature-dependent current–voltage (I–V), frequency-dependent capacitance–voltage (C–V) and conductance–voltage (G/ ?- V) measurements are carried out for the electrical characterization of a zinc oxide ...
Temperature dependence of band gaps in sputtered SnSe thin films
(Elsevier Ltd, 2019)
Temperature-dependent transmission experiments were performed for tin selenide (SnSe) thin films deposited by rf magnetron sputtering method in between 10 and 300 K and in the wavelength region of 400–1000 nm. Transmission ...
Temperature dependence of electrical properties in In/Cu 2 ZnSnTe 4 /Si/Ag diodes
(Indian Academy of Sciences, 2019)
Cu 2 ZnSnTe 4 (CZTTe) thin films with In metal contact were deposited by thermal evaporation on monocrystalline n-type Si wafers with Ag ohmic contact to investigate the device characteristics of an In/CZTTe/Si/Ag diode. ...
Frequency effect on electrical and dielectric characteristics of In/Cu 2 ZnSnTe 4 /Si/Ag diode structure
(Springer New York LLC, 2019)
In/Cu 2 ZnSnTe 4 /Si/Ag diode structure was fabricated by sputtering Cu 2 ZnSnTe 4 (CZTTe) thin film layer on the Si layer with In front contact. The frequency dependent room temperature capacitance and conductance ...
Electrical characterization of CdZnTe/Si diode structure
(Springer, 2020)
Temperature-dependent current-voltage (I- V) , and frequency dependent capacitance-voltage (C- V) and conductance-voltage (G- V) measurements were performed in order to analyze characteristics of CdZnTe/Si structure. ...