Yazar "Ürgen, Mustafa" için Araştırma Çıktıları | TR-Dizin | WoS | Scopus | PubMed listeleme
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Alternative approach for determination of energy band gap of semiconductors through electrical analysis
Özdemir, Orhan; Tatar, Beyhan; Yılmazer, Deneb; Gökdemir, Pınar; Ürgen, Mustafa; Kutlu, Kubilay (2010)Traditional way of extracting energy band gap (EG) of semiconductors from UV-Visible transmisson measurement becomes difficult once EG lies below than 1 eV. Instead of optical excitation of electrons from valance to ... -
Excess Capacitance Due to Minority Carrier Injection in CrSi2/p-Type Crystalline Si Isotype Junction
Özdemir, Orhan; Yılmazer, Deneb; Tatar, Beyhan; Ürgen, Mustafa; Kutlu, Kubilay (Iop Publishing Ltd, 2010)Excess current and capacitance phenonema were observed for the first time on a CrSi2/p-type crystalline silicon junction produced by cathodic arc physical vapor deposition. The heterojunction was investigated by ... -
Improvement in electrical and photovoltaic properties of a-Si/c-Si heterojunction with slanted nano-columnar amorphous silicon thin films for photovoltaic applications
Tatar, Beyhan; Demiroğlu, Dilek; Kazmanlı, K.; Ürgen, Mustafa (Elsevier Science Bv, 2015)The flat a-Si and slanted nanocolumnar (S-nC) a-Si thin films were prepared on c-Si and corning glass substrates by e-beam physical vapor deposition (EB-PVD) technique. The structural properties of all the grown thin films ... -
The influence of Er3+ doping on the structural and optical properties of CeO2 thin films grown by PED
Tatar, Beyhan; Gökdemir, Fatma Pınar; Pehlivan, Esat; Ürgen, Mustafa (Elsevier Science Bv, 2013)Erbium doped CeO2 thin films were deposited on both Corning glass substrates and indium doped tin oxide (ITO) coated glass substrates by pulsed e-beam deposition (PED) method at room temperature. Structural features of Er ... -
Investigation of structural and electrical properties of flat a-Si/c-Si heterostructure fabricated by EBPVD technique
Demiroğlu, Dilek; Tatar, Beyhan; Kazmanli, K.; Ürgen, Mustafa (American Institute of Physics Inc., 2013)Flat amorphous silicon - crystal silicon (a-Si/c-Si) heterostructure were prepared by ultra-high vacuum electron beam evaporation technique on p-Si (111) and n-Si (100) single crystal substrates. Structural analyses were ... -
Investigation of structural and electrical properties of p-CuPc/c-Si and p-CuPc/a-Si/c-Si hybrid photodiodes prepared by CSP technique
Tatar, Beyhan; Demiroğlu, Dilek; Ürgen, Mustafa (Elsevier Science Bv, 2014)To produce p-CuPc/c-Si and p-CuPc/a-Si/c-Si heterojunctions, at first, amorphous silicon thin film was deposited on p-Si (111) and n-Si (100) single crystalline substrates by high vacuum electron beam evaporation technique. ... -
Structural and photovoltaic properties of a-Si (SNc)/c-Si heterojunction fabricated by EBPVD technique
Demiroğlu, Dilek; Tatar, Beyhan; Kazmanli, K.; Ürgen, Mustafa (American Institute of Physics Inc., 2013)In last two decades sculptured thin films are very attractive for researches. Some properties of these thin films, like high porosity correspondingly high large surface area, controlled morphology; bring into prominence ... -
Structure and photovoltaic properties of Ag/p-CuPc/a-Si/c-Si/Ag organic-inorganic hybrid heterojunction fabricated by chemical spray pyrolysis technique
Tatar, Beyhan; Demiroğlu, Dilek; Ürgen, Mustafa (Elsevier Science Bv, 2013)This investigation refers to the fabrication of an organic-inorganic hybrid heterojunction photovoltaic device. Heterojunctions PV devices were fabricated by growing p-type organic CuPc films onto inorganic amorphous silicon ... -
Transport and storage properties of CrSi2/Si junctions made using the CAPVD technique
Menda, Ugur Deneb; Özdemir, Orhan; Tatar, Beyhan; Ürgen, Mustafa; Kutlu, Kubilay (Elsevier Sci Ltd, 2010)p-CrSi2/n-crystSi and p-CrSi2/p-crystSi hetero junctions produced by cathodic arc physical vapor deposition were worked out by means of capacitance-voltage-temperature (C-V-T) and current-voltage-temperature (I-V-T) ...