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Investigation of structural and electrical properties of flat a-Si/c-Si heterostructure fabricated by EBPVD technique
(American Institute of Physics Inc., 2013)
Flat amorphous silicon - crystal silicon (a-Si/c-Si) heterostructure were prepared by ultra-high vacuum electron beam evaporation technique on p-Si (111) and n-Si (100) single crystal substrates. Structural analyses were ...
Alternative approach for determination of energy band gap of semiconductors through electrical analysis
(2010)
Traditional way of extracting energy band gap (EG) of semiconductors from UV-Visible transmisson measurement becomes difficult once EG lies below than 1 eV. Instead of optical excitation of electrons from valance to ...
Structural and photovoltaic properties of a-Si (SNc)/c-Si heterojunction fabricated by EBPVD technique
(American Institute of Physics Inc., 2013)
In last two decades sculptured thin films are very attractive for researches. Some properties of these thin films, like high porosity correspondingly high large surface area, controlled morphology; bring into prominence ...