Konu "Tin compounds" için Fakülteler listeleme
Toplam kayıt 7, listelenen: 1-7
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CZTSSe thin films fabricated by single step deposition for superstrate solar cell applications
(Springer New York LLC, 2019)The focus of this study is the characterization of Cu2ZnSn(S,Se)4 (CZTSSe) thin films and fabrication of CZTSSe solar cell in superstrate configuration. In this work, superstrate-type configuration of glass/ITO/CdS/CZTSSe/Au ... -
Frequency effect on electrical and dielectric characteristics of In/Cu 2 ZnSnTe 4 /Si/Ag diode structure
(Springer New York LLC, 2019)In/Cu 2 ZnSnTe 4 /Si/Ag diode structure was fabricated by sputtering Cu 2 ZnSnTe 4 (CZTTe) thin film layer on the Si layer with In front contact. The frequency dependent room temperature capacitance and conductance ... -
Growth and Characterization of Stoichiometric Cu2ZnSnS4 Crystal Using Vertical Bridgman Technique
(John Wiley and Sons Inc, 2022)Stoichiometric Cu2ZnSnS4 (CZTS) single phase crystals are successfully grown in a single-zone vertical furnace by Bridgman technique. X-ray diffraction (XRD) and Raman spectroscopy measurements are employed to investigate ... -
Investigation of band gap energy versus temperature for SnS2 thin films grown by RF-magnetron sputtering
(Elsevier B.V., 2020)SnS2 thin films grown by magnetron sputtering technique were characterized by structurally and optically in the present work. Crystalline parameters, atomic compositions, and surface characteristics of SnS2 thin films were ... -
Temperature dependence of band gaps in sputtered SnSe thin films
(Elsevier Ltd, 2019)Temperature-dependent transmission experiments were performed for tin selenide (SnSe) thin films deposited by rf magnetron sputtering method in between 10 and 300 K and in the wavelength region of 400–1000 nm. Transmission ... -
Temperature dependence of electrical properties in In/Cu 2 ZnSnTe 4 /Si/Ag diodes
(Indian Academy of Sciences, 2019)Cu 2 ZnSnTe 4 (CZTTe) thin films with In metal contact were deposited by thermal evaporation on monocrystalline n-type Si wafers with Ag ohmic contact to investigate the device characteristics of an In/CZTTe/Si/Ag diode. ... -
Temperature dependent band gap in SnS2xSe(2-2x) (x = 0.5) thin films
(Elsevier Ltd, 2020)Structural and optical properties of SnS2xSe(2-2x) thin films grown by magnetron sputtering method were investigated for composition of x = 0.5 (SnSSe) in the present study. X-ray diffraction, energy dispersive X-ray ...