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Temperature dependence of electrical characteristics of Cr/p-Si(100) Schottky barrier diodes
(World Scientific Publ Co Pte Ltd, 2008)The electrical characteristics of Cr/p-Si(100) Schottky barrier diodes have been measured in the temperature range of 100-300 K. The I-V analysis based on thermionic emission (TE) theory has revealed an abnormal decrease ...