Yazar "Parlak, Mehmet" için listeleme
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Analysis of current conduction mechanism in CZTSSe/n-Si structure
Terlemezoğlu, Makbule; Bayraklı Sürücü, Özge; Güllü, Hasan Hüseyin; Çolako?lu, Tahir; Yıldız, Dilber Esra; Parlak, Mehmet (Springer, 2018)In this study, Cu2ZnSn(S,Se)(4) (CZTSSe) thin films were deposited by the single step thermal evaporation process using the sintered powder of CZTSSe on soda lime glass (SLG) and Si wafer substrates. The structural, optical, ... -
Characterization of Cu-rich and Zn-poor Cu2ZnSnS4 single crystal grown by vertical Bridgman technique
Peksu, Elif; Terlemezoğlu, Makbule; Parlak, Mehmet; Karaağaç, Hakan (Elsevier B.V., 2021)To date, although a number of studies have focused on understanding the fundamental properties of Cu-poor/Zn-rich Cu2ZnSnS4 (CZTS) single crystals, little attention has been paid to investigate the physical properties of ... -
Characterization of one-step deposited Cu2ZnSnS4 thin films derived from a single crystalline powder
Peksu, Elif; Terlemezoğlu, Makbule; Parlak, Mehmet; Karaağaç, Hakan (Pergamon-Elsevier Science Ltd, 2019)In this paper, Cu-deficient and Zn-rich Cu2ZnSnS4 (CZTS) single crystals were successfully grown by Bridgman technique. Following the investigation of structural and photo-electrical properties of the grown CZTS crystal, ... -
Construction of self-assembled vertical nanoflakes on CZTSSe thin films
Terlemezoğlu, Makbule; Bayraklı Sürücü, Özge; Çolako?lu, Tahir; Abak, Musa Kurtuluş; Güllü, Hasan Hüseyin; Erçelebi, Çiğdem; Parlak, Mehmet (Institute of Physics Publishing, 2019)Cu2ZnSn(S, Se)4 (CZTSSe) is a promising alternative absorber material to achieve high power conversion efficiencies, besides its property of involving low-cost and earth-abundant elements when compared to Cu(In, Ga)Se2 ... -
CZTSSe thin films fabricated by single step deposition for superstrate solar cell applications
Terlemezoğlu, Makbule; Bayraklı Sürücü, Özge; Doğru Balbaşı, Çiğdem; Güllü, Hasan Hüseyin; Çiftpınar, Hande; Erçelebi, Çiğdem; Parlak, Mehmet (Springer New York LLC, 2019)The focus of this study is the characterization of Cu2ZnSn(S,Se)4 (CZTSSe) thin films and fabrication of CZTSSe solar cell in superstrate configuration. In this work, superstrate-type configuration of glass/ITO/CdS/CZTSSe/Au ... -
Deposition of CZTSe thin films and illumination effects on the device properties of Ag/n-Si/p-CZTSe/In heterostructure
Bayraklı Sürücü, Özge; Terlemezoğlu, Makbule; Güllü, H. H.; Parlak, Mehmet (Elsevier Science Sa, 2017)Characterization of Cu2ZnSnSe4 (CZTSe) thin films deposited by thermal evaporation sequentially from the pure elemental sources and in-situ post annealing was carried out at 400 C under Se evaporation atmosphere. Another ... -
Determination of current transport characteristics in Au-Cu/CuO/n-Si Schottky diodes
Bayraklı Sürücü, Özge; Güllü, Hasan Hüseyin; Terlemezoğlu, Makbule; Yıldız, D. E.; Parlak, Mehmet (Elsevier B.V., 2019)In this study, the material properties of CuO thin films fabricated by sputtering technique and electrical properties of CuO/n-Si structure were reported. Temperature-dependent current-voltage (I-V) measurement was carried ... -
Electrical characterization of CdZnTe/Si diode structure
Balbasi, C.D.; Terlemezoğlu, Makbule; Güllü, H. H.; Yıldız, D. E.; Parlak, Mehmet (Springer, 2020)Temperature-dependent current-voltage (I- V) , and frequency dependent capacitance-voltage (C- V) and conductance-voltage (G- V) measurements were performed in order to analyze characteristics of CdZnTe/Si structure. ... -
Fabrication of CdSeXTe1-x thin films by sequential growth using double sources
Demir, M.; Güllü, H. H.; Terlemezoğlu, Makbule; Parlak, Mehmet (Elsevier, 2021)CdSexTe(1-x) (CST) ternary thin films were fabricated by stacking thermally evaporated CdSe and electron beam evaporated CdTe layers. The final structure was achieved in a stoichiometric form of approximately Cd:Se:Te = ... -
Frequency effect on electrical and dielectric characteristics of In/Cu 2 ZnSnTe 4 /Si/Ag diode structure
Güllü, H. H.; Bayraklı Sürücü, Özge; Terlemezoğlu, Makbule; Yıldız, D. E.; Parlak, Mehmet (Springer New York LLC, 2019)In/Cu 2 ZnSnTe 4 /Si/Ag diode structure was fabricated by sputtering Cu 2 ZnSnTe 4 (CZTTe) thin film layer on the Si layer with In front contact. The frequency dependent room temperature capacitance and conductance ... -
Growth and Characterization of Stoichiometric Cu2ZnSnS4 Crystal Using Vertical Bridgman Technique
Peksu, Elif; Terlemezoğlu, Makbule; Parlak, Mehmet; Karaağaç, Hakan (John Wiley and Sons Inc, 2022)Stoichiometric Cu2ZnSnS4 (CZTS) single phase crystals are successfully grown in a single-zone vertical furnace by Bridgman technique. X-ray diffraction (XRD) and Raman spectroscopy measurements are employed to investigate ... -
Illumination and voltage effects on the forward and reverse bias current-voltage (I-V) characteristics in In/In2S3/p-Si photodiodes
Yükseltürk, Esra; Sürücü, Özge; Terlemezoğlu, Makbule; Parlak, Mehmet; Altındal, Şemsettin (Springer, 2021)The illumination and voltage effects on the I-V measurements of the fabricated In/In2S3/p-Si photodiode were investigated in dark and under various illumination intensities (20–100 mW/cm2) between ± 2 V. Two linear regions ... -
Investigation of band gap energy versus temperature for SnS2 thin films grown by RF-magnetron sputtering
Işık, M.; Güllü, H. H.; Terlemezoğlu, Makbule; Surucu, O.B.; Parlak, Mehmet; Gasanly, Nizami Mamed (Elsevier B.V., 2020)SnS2 thin films grown by magnetron sputtering technique were characterized by structurally and optically in the present work. Crystalline parameters, atomic compositions, and surface characteristics of SnS2 thin films were ... -
Investigation of carrier transport mechanisms in the Cu-Zn-Se based hetero-structure grown by sputtering technique
Güllü, H. H.; Terlemezoğlu, Makbule; Bayraklı Sürücü, Özge; Yıldız, D. E.; Parlak, Mehmet (Canadian Science Publishing, Nrc Research Press, 2018)In this paper, we present results of the electrical characterization of n-Si/p-Cu-Zn-Se hetero-structure. Sputtered film was found in Se-rich behavior with tetragonal polycrystalline nature along with (112) preferred ... -
Investigation of electrical characteristics of Ag/ZnO/Si sandwich structure
Güllü, H. H.; Bayraklı Sürücü, Özge; Terlemezoğlu, Makbule; Yıldız, D. E.; Parlak, Mehmet (Springer New York LLC, 2019)In this study, temperature-dependent current–voltage (I–V), frequency-dependent capacitance–voltage (C–V) and conductance–voltage (G/ ?- V) measurements are carried out for the electrical characterization of a zinc oxide ... -
Investigation of precursor sequence and post-annealing effects on the properties of Cu2SnZnSe4 thin films deposited by the elemental thermal evaporation
Bayraklı Sürücü, Özge; Terlemezoğlu, Makbule; Güllü, H. H.; Parlak, Mehmet (Iop Publishing Ltd, 2017)Cu2ZnSnSe4 (CZTSe) thin films were deposited onto soda lime glass substrates by thermal evaporation using the pure elemental sources. The influence of the sequential deposition order of Zn and Sn precursor layers for ... -
Material and Si-based diode analyses of sputtered ZnTe thin films
Güllü, H. H.; Surucu, O.B.; Işık, M.; Terlemezoğlu, Makbule; Parlak, Mehmet (Springer, 2020)Structural, optical, and electrical properties ZnTe thin films grown by magnetron sputtering technique were studied by X-ray diffraction, atomic force microscopy, Raman spectroscopy, and electrical conductivity measurements. ... -
Temperature dependence of band gaps in sputtered SnSe thin films
Delice, S.; Işık, M.; Güllü, H. H.; Terlemezoğlu, Makbule; Bayraklı Sürücü, Özge; Parlak, Mehmet; Gasanly, Nizami Mamed (Elsevier Ltd, 2019)Temperature-dependent transmission experiments were performed for tin selenide (SnSe) thin films deposited by rf magnetron sputtering method in between 10 and 300 K and in the wavelength region of 400–1000 nm. Transmission ... -
Temperature dependence of electrical properties in In/Cu 2 ZnSnTe 4 /Si/Ag diodes
Güllü, H. H.; Yıldız, D. E.; Bayraklı Sürücü, Özge; Terlemezoğlu, Makbule; Parlak, Mehmet (Indian Academy of Sciences, 2019)Cu 2 ZnSnTe 4 (CZTTe) thin films with In metal contact were deposited by thermal evaporation on monocrystalline n-type Si wafers with Ag ohmic contact to investigate the device characteristics of an In/CZTTe/Si/Ag diode. ... -
Temperature dependent band gap in SnS2xSe(2-2x) (x = 0.5) thin films
Delice, S.; Işık, M.; Güllü, H. H.; Terlemezoğlu, Makbule; Surucu, O.B.; Gasanly, Nizami Mamed; Parlak, Mehmet (Elsevier Ltd, 2020)Structural and optical properties of SnS2xSe(2-2x) thin films grown by magnetron sputtering method were investigated for composition of x = 0.5 (SnSSe) in the present study. X-ray diffraction, energy dispersive X-ray ...