Konal, MustafaKacar, Firat2025-04-062025-04-0620250377-20630974-780Xhttps://doi.org/10.1080/03772063.2025.2460668https://hdl.handle.net/20.500.11776/17210The advent of memristors has significantly increased research interest in memelements, leading to the development of various memcapacitor emulator circuits. In this study, we present a memcapacitor emulator circuit based on a fully balanced voltage differencing buffered amplifier (FB-VDBA), that demonstrates improved tunability and adaptability. The proposed emulator consists of two-stage configuration, where the second stage is a VDBA memristor. The VDBA memristor is transformed into a memcapacitor emulator, while the first stage acts as a VDBA active element circuit-based mutator. This memcapacitor emulator incorporates two VDBAs, two capacitors, and a resistor, enabling direct charge control through capacitor adjustments in the mutator stage. Furthermore, the emulator can operate across varying frequencies from 10 Hz to 10 kHz by modifying the capacitor in the memristor stage. Our results reveal that the emulator effectively supports an associative learning circuit, illustrating its potential for practical applications. The analysis of the non-ideal model is provided, highlighting the impact of parasitic impedances on circuit performance. Comprehensive PVT (Process, Voltage, and Temperature) analyses confirm the emulator's robustness under diverse conditions. The memcapacitor circuit demonstrated reliable performance with a +/- 10% variation in the VDBA supply voltages, as well as under extreme temperatures ranging from -50 degrees C to 100 degrees C. Simulations conducted using LTSpice with TSMC 0.18 mu m CMOS process parameters reveal precise time responses, voltage-charge relationships, and memory properties, emphasizing the circuit's suitability for advanced memory applications.en10.1080/03772063.2025.2460668info:eu-repo/semantics/closedAccessMemcapacitormutatorVDBAmemristoremulatorArticleQ4WOS:0014182202000012-s2.0-85217556319Q2