Bulut, PınarErdoğan, I.Akbaş, Halide2022-05-112022-05-1120141386-94771873-1759https://doi.org/10.1016/j.physe.2014.06.020https://hdl.handle.net/20.500.11776/7011By using a variational procedure within the effective mass approximation, we calculated the 2p state binding energy, E-2pha(x,P), and the binding energy turning point, R-2pEbT (X, P) of a hydrogenic donor impurity located at the centre of the GaAs GaAs/Ga1-xAlxAs spherical quantum dot under the influence of hydrostatic pressure. The results obtained show that the binding energy turning point, R-2pEbT(X, P) is an important factor in dealing with the 2p bound state of a hydrogenic donor impurity embedded at the centre of the quantum dot. (C) 2014 Elsevier By. All rights reserved,en10.1016/j.physe.2014.06.020info:eu-repo/semantics/closedAccessTurning pointSpherical dotDonor impurityBinding energyMagnetic-FieldExcited-StatesElectric-FieldTransition EnergiesGaas-Ga1-XalxasWellsWiresArticle63299303Q2WOS:0003406270000452-s2.0-84904326165Q2