Demirbilek, N.Kaya, MehmetYakuphanoğlu, Fahrettin2023-04-202023-04-2020231300-1884https://doi.org/10.17341/gazimmfd.1001776https://hdl.handle.net/20.500.11776/11106In this work, undoped and co-doped ZnO:Al:Mn semiconductor thin films and p-type Si diodes were produced via sol-gel technique method. The morphological and optical properties of the produced thin films were investigated using SEM, XRD and UV-Spectrophotometer, respectively. It was observed that the crystal structure of the semiconductor samples had a hexagonal wurtzite structure and the forbidden energy gaps of the samples decreased with increasing Mn contribution. The experimental zero-feed current barrier height (?b(I-V)), rectification ratio, ideality factor and Ion/Ioff parameters of the diodes were determined via the thermionic emission model. It was determined that the produced Al/p-Si/ZnO:Al:Mn/Al diode had high rectification ratio and Ion/Ioff values of 1.56x105 and 1.54x104, respectively, and exhibited light-sensitive behaviour. Also, the capacitance barrier height (?b(C-V)), built-in voltage (Vbi), diffusion potential (Vd), donor concentration (Nd) and depletion layer width (Wd) values of Al/p-Si/ZnO:Al:Mn/Al diode were calculated via the C-2-V graph drawn under 1MHz frequency. The results show that the fabricated diodes can be used as photodiodes or photosensors in optoelectronic applications. © 2023 Gazi Universitesi Muhendislik-Mimarlik. All rights reserved.tr10.17341/gazimmfd.1001776info:eu-repo/semantics/openAccessoptical propertiesphotodiodeSemiconductorsol-gelZnOCapacitanceCrystal structureElectric rectifiersII-VI semiconductorsMagnetic semiconductorsManganese compoundsOptical propertiesPhotodiodesSchottky barrier diodesSemiconducting zinc compoundsSol-gel processThermionic emissionThin filmsWide band gap semiconductorsZinc oxideZinc sulfideBarrier heightsCo-doped ZnOP-type SiPure coPure ZnORectification ratioSemiconductors thin filmsSol'gelStructural and optical propertiesZnO:AlSol-gelsArticle3811631732-s2.0-851366967101159623Q2