Demiroğlu, DilekTatar, BeyhanKazmanli, K.Ürgen, Mustafa2022-05-112022-05-112013978-07354119750094-243Xhttps://doi.org/10.1063/1.4849249https://hdl.handle.net/20.500.11776/7005Doga Nanobiotech Inc.;Mega Technology Services Inc.3rd International Advances in Applied Physics and Materials Science Congress, APMAS 2013 -- 24 April 2013 through 28 April 2013 -- -- 111830Flat amorphous silicon - crystal silicon (a-Si/c-Si) heterostructure were prepared by ultra-high vacuum electron beam evaporation technique on p-Si (111) and n-Si (100) single crystal substrates. Structural analyses were investigated by XRD, Raman and FEG-SEM analysis. With these analyses we determined that at the least amorphous structure shows modification but amorphous structure just protected. The electrical and photovoltaic properties of flat a-Si/c-Si heterojunction devices were investigated with current-voltage characteristics under dark and illumination conditions. Electrical properties of flat a-Si/c-Si heterorojunction; such as barrier height ? B , diode ideality factor ? were determined from current-voltage characteristics in dark conditions. These a-Si/c-Si heterostructure have good rectification behavior as a diode and exhibit high photovoltaic sensitivity. © 2013 AIP Publishing LLC.en10.1063/1.4849249info:eu-repo/semantics/closedAccessAmorphous silicone-beam evaporation techniqueelectrical propertiesConference Object15691581612-s2.0-84942855737N/A