Delice, S.Işık, M.Güllü, H. H.Terlemezoğlu, MakbuleSurucu, O.B.Gasanly, Nizami MamedParlak, Mehmet2022-05-112022-05-1120201369-8001https://doi.org/10.1016/j.mssp.2020.105083https://hdl.handle.net/20.500.11776/4665Structural and optical properties of SnS2xSe(2-2x) thin films grown by magnetron sputtering method were investigated for composition of x = 0.5 (SnSSe) in the present study. X-ray diffraction, energy dispersive X-ray spectroscopy, atomic force microscopy and scanning electron microscopy methods were used for structural characterization while temperature-dependent transmission measurements carried out at various temperatures in between 10 and 300 K were accomplished for optical investigations. X-ray diffraction pattern of studied composition presented peaks at positions which are between those of SnSe2 and SnS2. Transmittance spectra recorded at all applied temperatures were analyzed using well-known Tauc relation. Analyses revealed the direct band gap energy value of SnSSe thin films as 1.75 eV at room temperature. Change of band gap energy as a response to varying temperature were discussed in the study by utilizing Varshni relation. It was shown that variation of gap energy values was well-matched with the Varshni's empirical formula. Energy band gap at absolute zero and rate of change of band gap with temperature were found to be 1.783 eV and ?2.1 × 10?4 eV K?1, respectively. © 2020 Elsevier Ltden10.1016/j.mssp.2020.105083info:eu-repo/semantics/closedAccessOptical propertiesSnS2SnSe2Thin filmsEnergy dispersive spectroscopyEnergy gapIV-VI semiconductorsOptical propertiesScanning electron microscopySelenium compoundsSemiconducting tin compoundsThin filmsTin compoundsX ray diffractionEnergy dispersive X ray spectroscopyMagnetron sputtering methodSnS2SnSe2Structural and optical propertiesStructural characterizationTransmission measurementsTransmittance spectraSulfur compoundsArticle114Q1WOS:0005354626000162-s2.0-85082121091Q1