Investigation of structural and electrical properties of p-CuPc/c-Si and p-CuPc/a-Si/c-Si hybrid photodiodes prepared by CSP technique

dc.authorid0000-0003-3549-0049
dc.authorid0000-0003-3463-2009
dc.authorscopusid18042707800
dc.authorscopusid55613591800
dc.authorscopusid7003971869
dc.authorwosidTatar, Beyhan/ABA-6195-2020
dc.authorwosidUrgen, Mustafa/D-5422-2014
dc.contributor.authorTatar, Beyhan
dc.contributor.authorDemiroğlu, Dilek
dc.contributor.authorÜrgen, Mustafa
dc.date.accessioned2022-05-11T14:29:31Z
dc.date.available2022-05-11T14:29:31Z
dc.date.issued2014
dc.departmentFakülteler, Fen Edebiyat Fakültesi, Fizik Bölümü
dc.description.abstractTo produce p-CuPc/c-Si and p-CuPc/a-Si/c-Si heterojunctions, at first, amorphous silicon thin film was deposited on p-Si (111) and n-Si (100) single crystalline substrates by high vacuum electron beam evaporation technique. Subsequently p-type organic semiconductor CuPc thin film was prepared on different substrates, which are Si single crystalline wafer, amorphous silicon and corning glass substrates by chemical spray pyrolysis (CSP) technique. The structural properties of CuPc thin films were investigated by XRD and Raman analysis. The CuPc thin film grown on corning glass and c-Si wafer substrate have orthorhombic alpha-phase crystalline nature and show only one characteristic peak oriented in (200) direction. The CuPc thin film grown on a-Si substrate has an amorphous structure. Surface and cross-sectional morphology of CuPc/c-Si and CuPc/a-Si/c-Si heterojunctions were investigated by FESEM images. The electrical transport and diode parameters of these organic-inorganic hybrid heterojunction have been investigated by means of dc current-voltage (I-V) measurements at room temperature in dark condition. The current-voltage characteristics of these hybrid heterojunctions demonstrated good rectifying behavior and have good photosensitivity in light conditions. The diode parameters such as barrier height Phi(B), diode ideality factor n, series resistance R-s and shunt resistance R-sh were determined from the I-V characteristic. The values of the ideality factor (n) and zero-bias barrier height (Phi(B0)) of CuPc/c-Si and CuPc/a-Si hybrid heterojunctions were found to be 9.64-8.06 and 0.93-0.89 eV respectively. It is revealed that the dominant conducting mechanism type of these organic-inorganic heterojunction diodes which have space charge limited conduction mechanism (SCLC). The values of the quantum efficiency (QE) of CuPc/c-Si and CuPc/a-Si hybrid heterojunctions were found to be 19.6-41% respectively. We have fabricated CuPc/a-Si/c-Si organic-inorganic hybrid photodiode with 41% quantum efficiency which corresponds to a responsivity of 0.21 A/W at 632.8 nm wavelength. These hybrid heterojunctions based on organic CuPc and inorganic c-Si can be used in photodiode due to photosensitivity and electrical properties. (C) 2014 Elsevier B.V. All rights reserved.
dc.description.sponsorshipTUBITAK The Scientific and Technological Research Council of Turkey Engineering Research GroupTurkiye Bilimsel ve Teknolojik Arastirma Kurumu (TUBITAK) [112M319]
dc.description.sponsorshipThis work was carried out with the support of TUBITAK The Scientific and Technological Research Council of Turkey Engineering Research Group (Project No. 112M319). Author is thankful to The Scientific and Technological Research Council of Turkey.
dc.identifier.doi10.1016/j.mee.2014.07.017
dc.identifier.endpage190
dc.identifier.issn0167-9317
dc.identifier.issn1521-3757
dc.identifier.scopus2-s2.0-84907372120
dc.identifier.scopusqualityQ2
dc.identifier.startpage184
dc.identifier.urihttps://doi.org/10.1016/j.mee.2014.07.017
dc.identifier.urihttps://hdl.handle.net/20.500.11776/7013
dc.identifier.volume126
dc.identifier.wosWOS:000344435600035
dc.identifier.wosqualityQ3
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.institutionauthorTatar, Beyhan
dc.language.isoen
dc.publisherElsevier Science Bv
dc.relation.ispartofMicroelectronic Engineering
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.subjectCuPc
dc.subjectHybrid heterojunctions
dc.subjectElectrical properties
dc.subjectOrganic photodiodes
dc.subjectPhthalocyanine Thin-Films
dc.subjectChemical Spray-Pyrolysis
dc.subjectPhotovoltaic Properties
dc.subjectOptical-Absorption
dc.subjectRaman-Scattering
dc.subjectSolar-Cells
dc.subjectParameters
dc.titleInvestigation of structural and electrical properties of p-CuPc/c-Si and p-CuPc/a-Si/c-Si hybrid photodiodes prepared by CSP technique
dc.typeArticle

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