Examination of Resistive Switching Energy of Some Nonlinear Dopant Drift Memristor Models

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dc.contributor.authorTan, Rabia Korkmaz
dc.contributor.authorMert, Oya
dc.contributor.authorMutlu, Resat
dc.date.accessioned2024-10-29T17:59:10Z
dc.date.available2024-10-29T17:59:10Z
dc.date.issued2024
dc.departmentTekirdağ Namık Kemal Üniversitesi
dc.description.abstractIn the literature, there are memristor models based on nonlinear drift mechanisms and window functions. Memristors can be employed to model resistive memories. When the resistance of a memristor undergoes a transition from its lowest value to its highest value, or vice versa, this phenomenon is referred to as resistive or memristive switching. The energy required for this transition holds particular importance, especially in the context of resistive computer memory and digital logic applications. Experimental measurements can be used to determine the resistive switching energy, and it should also be possible to calculate it theoretically based on the parameters of the memristor model utilized. Recently, the resistive switching times of some of the nonlinear dopant drift memristor models have been examined analytically considering especially their memory and digital circuit applications. In the literature, to the best of our knowledge, the resistive switching energy of the nonlinear dopant drift memristor models has not been calculated and examined in detail. In this study, the memristive switching energy of some of the well-known memristor models using a window function is calculated and found to be infinite. This is not feasible according to the experiments in which a finite resistive switching energy is consumed. The criterion that a memristor must have a finite resistive energy is also presented in this study. The results and the criterion for the resistive switching energy presented in this paper can be utilized to build more realistic memristor models in the future.
dc.identifier.doi10.33180/InfMIDEM2024.103
dc.identifier.issn0352-9045
dc.identifier.issn2232-6979
dc.identifier.issue1en_US
dc.identifier.urihttps://doi.org/10.33180/InfMIDEM2024.103
dc.identifier.urihttps://hdl.handle.net/20.500.11776/14652
dc.identifier.volume54
dc.identifier.wosWOS:001203556900001
dc.identifier.wosqualityN/A
dc.indekslendigikaynakWeb of Science
dc.language.isoen
dc.publisherSoc Microelectronics, Electron Components Materials-Midem
dc.relation.ispartofInformacije Midem-Journal of Microelectronics Electronic Components and Materials
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/openAccess
dc.subjectMemristor
dc.subjectmemristor models
dc.subjectresistive memories
dc.subjectwindow function
dc.subjectmemristive switching
dc.subjectresistive switching
dc.titleExamination of Resistive Switching Energy of Some Nonlinear Dopant Drift Memristor Models
dc.typeArticle

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