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dc.contributor.authorÖzer, Merve
dc.contributor.authorAkay, S. K.
dc.contributor.authorPeksöz, Ahmet
dc.contributor.authorErtürk, Kadir
dc.contributor.authorKaynak, G.
dc.date.accessioned2022-05-11T14:29:28Z
dc.date.available2022-05-11T14:29:28Z
dc.date.issued2009
dc.identifier.issn1842-6573
dc.identifier.issn2065-3824
dc.identifier.urihttps://hdl.handle.net/20.500.11776/6991
dc.description.abstractThis paper presents structural, morphological and electrical properties of Ni/n-Si contacts formed by electro-deposition technique. Ni film is deposited on n-type Si (100) substrate using 2 mol/L Nickel Sulphamate, 0.5 mol/L Boric Acid solutions. The morphological properties are investigated by using energy dispersive X-Ray analysis and scanning electron microscopy imaging to perform local distribution of Ni. Electrical measurements have been done at room temperature to investigate the Schottky barrier height.en_US
dc.description.sponsorshipUludag UniversityUludag University [2005/4]en_US
dc.description.sponsorshipThis work was supported by Uludag University, Scientific Research Project Unit Grant No. 2005/4. We are also thankful to M. C. HACIISMAILOGLU and M. SAFAK for preparing samples used in this investigation.en_US
dc.language.isoengen_US
dc.publisherNatl Inst Optoelectronicsen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectElectro-depositionen_US
dc.subjectSchottky barrier heighten_US
dc.subjectScanning electron microscopyen_US
dc.subjectMorphological propertiesen_US
dc.subjectHydrogenen_US
dc.titleElectrical, structural and morphological properties of Ni/n-Si contactsen_US
dc.typearticleen_US
dc.relation.ispartofOptoelectronics and Advanced Materials-Rapid Communicationsen_US
dc.departmentFakülteler, Fen Edebiyat Fakültesi, Fizik Bölümüen_US
dc.identifier.volume3en_US
dc.identifier.issue5en_US
dc.identifier.startpage506en_US
dc.identifier.endpage508en_US
dc.institutionauthorErtürk, Kadir
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.authorscopusid9742545600
dc.authorscopusid24801954600
dc.authorscopusid23100976500
dc.authorscopusid18036952100
dc.authorscopusid12042075600
dc.authorwosidakay, sertan kemal/R-7260-2016
dc.authorwosidPEKSÖZ, AHMET/AAG-9772-2021
dc.identifier.wosWOS:000268622300025en_US
dc.identifier.scopus2-s2.0-77951992309en_US


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