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Growth and Characterization of Stoichiometric Cu2ZnSnS4 Crystal Using Vertical Bridgman Technique

dc.contributor.authorPeksu, Elif
dc.contributor.authorTerlemezoğlu, Makbule
dc.contributor.authorParlak, Mehmet
dc.contributor.authorKaraağaç, Hakan
dc.date.accessioned2022-05-11T14:03:21Z
dc.date.available2022-05-11T14:03:21Z
dc.date.issued2022
dc.identifier.issn1862-6300
dc.identifier.urihttps://doi.org/10.1002/pssa.202100595
dc.identifier.urihttps://hdl.handle.net/20.500.11776/4677
dc.description.abstractStoichiometric Cu2ZnSnS4 (CZTS) single phase crystals are successfully grown in a single-zone vertical furnace by Bridgman technique. X-ray diffraction (XRD) and Raman spectroscopy measurements are employed to investigate the structural properties of the grown crystals, which verifies the formation of mono-phase CZTS crystals with kesterite structure. The energy-dispersive X-ray analysis (EDS) indicates the growth of CZTS single phase crystals with a nearly stoichiometric chemical composition. The carrier concentration, mobility, and resistivity of the crystals are determined from Hall Effect measurements. At room temperature, the respective values are found to be 4.0 × 1015 cm?3, 1.0 cm2 Vs?1, and 1540 ? cm. The activation energies for the acceptor levels are also determined using the temperature-dependent hole concentration measurement. CuZn-antisite originated acceptor level with activation energies of ?121 meV is identified in a nearly stoichiometric kesterite structure. © 2021 Wiley-VCH GmbHen_US
dc.description.sponsorship315M401en_US
dc.description.sponsorshipThis work was supported by Turkish Scientific and Research Council (TUBITAK) under Grant no 315M401.en_US
dc.language.isoengen_US
dc.publisherJohn Wiley and Sons Incen_US
dc.identifier.doi10.1002/pssa.202100595
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectconductivityen_US
dc.subjectCu2ZnSnS4en_US
dc.subjectmobilityen_US
dc.subjectActivation energyen_US
dc.subjectChemical analysisen_US
dc.subjectCopper compoundsen_US
dc.subjectCrystal structureen_US
dc.subjectEnergy dispersive X ray analysisen_US
dc.subjectHall mobilityen_US
dc.subjectHole concentrationen_US
dc.subjectTin compoundsen_US
dc.subjectX ray diffraction analysisen_US
dc.subjectAcceptor levelsen_US
dc.subjectBridgman techniquesen_US
dc.subjectConductivityen_US
dc.subjectKesteritesen_US
dc.subjectMobilityen_US
dc.subjectSingle phasisen_US
dc.subjectSingle zonesen_US
dc.subjectVertical Bridgman techniqueen_US
dc.subjectVertical furnacesen_US
dc.subjectX- ray diffractionsen_US
dc.subjectZinc compoundsen_US
dc.titleGrowth and Characterization of Stoichiometric Cu2ZnSnS4 Crystal Using Vertical Bridgman Techniqueen_US
dc.typearticleen_US
dc.relation.ispartofPhysica Status Solidi (A) Applications and Materials Scienceen_US
dc.departmentFakülteler, Fen Edebiyat Fakültesi, Fizik Bölümüen_US
dc.identifier.volume219en_US
dc.identifier.issue3en_US
dc.institutionauthorTerlemezoğlu, Makbule
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.authorscopusid56993881400
dc.authorscopusid57193666915
dc.authorscopusid7003589218
dc.authorscopusid15622745500
dc.identifier.wosWOS:000723564700001en_US
dc.identifier.scopus2-s2.0-85120178927en_US


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