dc.contributor.author | Demirbilek, N. | |
dc.contributor.author | Kaya, Mehmet | |
dc.contributor.author | Yakuphanoğlu, Fahrettin | |
dc.date.accessioned | 2023-04-20T08:05:55Z | |
dc.date.available | 2023-04-20T08:05:55Z | |
dc.date.issued | 2023 | |
dc.identifier.issn | 1300-1884 | |
dc.identifier.uri | https://doi.org/10.17341/gazimmfd.1001776 | |
dc.identifier.uri | https://hdl.handle.net/20.500.11776/11106 | |
dc.description.abstract | In this work, undoped and co-doped ZnO:Al:Mn semiconductor thin films and p-type Si diodes were produced via sol-gel technique method. The morphological and optical properties of the produced thin films were investigated using SEM, XRD and UV-Spectrophotometer, respectively. It was observed that the crystal structure of the semiconductor samples had a hexagonal wurtzite structure and the forbidden energy gaps of the samples decreased with increasing Mn contribution. The experimental zero-feed current barrier height (?b(I-V)), rectification ratio, ideality factor and Ion/Ioff parameters of the diodes were determined via the thermionic emission model. It was determined that the produced Al/p-Si/ZnO:Al:Mn/Al diode had high rectification ratio and Ion/Ioff values of 1.56x105 and 1.54x104, respectively, and exhibited light-sensitive behaviour. Also, the capacitance barrier height (?b(C-V)), built-in voltage (Vbi), diffusion potential (Vd), donor concentration (Nd) and depletion layer width (Wd) values of Al/p-Si/ZnO:Al:Mn/Al diode were calculated via the C-2-V graph drawn under 1MHz frequency. The results show that the fabricated diodes can be used as photodiodes or photosensors in optoelectronic applications. © 2023 Gazi Universitesi Muhendislik-Mimarlik. All rights reserved. | en_US |
dc.description.sponsorship | Firat Üniversitesi, FU: FF16.24 | en_US |
dc.description.sponsorship | This study was supported by Firat University, for PhD thesis (Project No. FF16.24). | en_US |
dc.language.iso | tur | en_US |
dc.publisher | Gazi Universitesi | en_US |
dc.identifier.doi | 10.17341/gazimmfd.1001776 | |
dc.rights | info:eu-repo/semantics/openAccess | en_US |
dc.subject | optical properties | en_US |
dc.subject | photodiode | en_US |
dc.subject | Semiconductor | en_US |
dc.subject | sol-gel | en_US |
dc.subject | ZnO | en_US |
dc.subject | Capacitance | en_US |
dc.subject | Crystal structure | en_US |
dc.subject | Electric rectifiers | en_US |
dc.subject | II-VI semiconductors | en_US |
dc.subject | Magnetic semiconductors | en_US |
dc.subject | Manganese compounds | en_US |
dc.subject | Optical properties | en_US |
dc.subject | Photodiodes | en_US |
dc.subject | Schottky barrier diodes | en_US |
dc.subject | Semiconducting zinc compounds | en_US |
dc.subject | Sol-gel process | en_US |
dc.subject | Thermionic emission | en_US |
dc.subject | Thin films | en_US |
dc.subject | Wide band gap semiconductors | en_US |
dc.subject | Zinc oxide | en_US |
dc.subject | Zinc sulfide | en_US |
dc.subject | Barrier heights | en_US |
dc.subject | Co-doped ZnO | en_US |
dc.subject | P-type Si | en_US |
dc.subject | Pure co | en_US |
dc.subject | Pure ZnO | en_US |
dc.subject | Rectification ratio | en_US |
dc.subject | Semiconductors thin films | en_US |
dc.subject | Sol'gel | en_US |
dc.subject | Structural and optical properties | en_US |
dc.subject | ZnO:Al | en_US |
dc.subject | Sol-gels | en_US |
dc.title | Investigation of structural and optical properties of pure ZnO and co-doped ZnO:Al:Mnx (x=1%, 2%, 3%, 5% at.) semiconductor thin films and electrical properties of produced diodes | en_US |
dc.title.alternative | Saf ZnO ve katkılı ZnO:Al:Mnx (x=1%, 2%, 3%, 5% at.) yarı iletken ince filmlerin yapısal ve optiksel özellikleri ile üretilen diyotların elektriksel özelliklerinin araştırılması | en_US |
dc.type | article | en_US |
dc.relation.ispartof | Journal of the Faculty of Engineering and Architecture of Gazi University | en_US |
dc.department | Meslek Yüksekokulları, Çorlu Meslek Yüksekokulu, Makine ve Metal Teknolojileri Bölümü | en_US |
dc.identifier.volume | 38 | en_US |
dc.identifier.issue | 1 | en_US |
dc.identifier.startpage | 163 | en_US |
dc.identifier.endpage | 173 | en_US |
dc.institutionauthor | Kaya, Mehmet | |
dc.relation.publicationcategory | Makale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı | en_US |
dc.authorscopusid | 57226314496 | |
dc.authorscopusid | 35890569200 | |
dc.authorscopusid | 56247755900 | |
dc.identifier.scopus | 2-s2.0-85136696710 | en_US |