Growth and optical characterization of Sn0.6Sb0.4Se layer single crystals for optoelectronic applications

Abstract

SnSe compound is an attractive semiconductor material due to its usage in photovoltaic applications. The sub-stitution of Sb in the SnSe compound presents a remarkable advantage especially in point of tuning optical characteristics. The present paper reports the structural and optical properties of Sn1-xSbxSe (x = 0.4) layered single crystals grown by the vertical Bridgman method. To the best of our knowledge, this work is the first investigation of the Sn0.6Sb0.4Se crystal grown with the vertical Bridgman technique. X-ray diffraction (XRD) pattern of the grown crystal indicated the well crystalline structure of the grown crystals. Lattice strain and interplanar spacing of the crystal structure were determined using the XRD pattern. Scanning electron micro-scope images allowed to the observation of the layer crystal structure. The layer crystalline structure shows 2D material properties and provides 2D applications. Optical properties were revealed by carrying out Raman, ellipsometry and transmission measurements. Raman modes, refractive index, extinction coefficient, and dielectric spectra, band gap energy of the crystal were presented throughout the paper. The obtained results indicated that Sn1-xSbxSe (x = 0.4) layer single crystals may be an alternative potential for photovoltaic and optoelectronic applications.