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Toplam kayıt 7, listelenen: 1-7
Electrical characterization of CdZnTe/Si diode structure
(Springer, 2020)
Temperature-dependent current-voltage (I- V) , and frequency dependent capacitance-voltage (C- V) and conductance-voltage (G- V) measurements were performed in order to analyze characteristics of CdZnTe/Si structure. ...
Temperature-dependent material characterization of CuZnSe2 thin films
(Elsevier B.V., 2020)
In the present work, CuZnSe2 (CZSe) thin films were co-deposited by magnetron sputtering of ZnSe and Cu targets. The structural analyses resulted in the stoichiometric elemental composition and polycrystalline nature without ...
Material and Si-based diode analyses of sputtered ZnTe thin films
(Springer, 2020)
Structural, optical, and electrical properties ZnTe thin films grown by magnetron sputtering technique were studied by X-ray diffraction, atomic force microscopy, Raman spectroscopy, and electrical conductivity measurements. ...
Temperature dependent band gap in SnS2xSe(2-2x) (x = 0.5) thin films
(Elsevier Ltd, 2020)
Structural and optical properties of SnS2xSe(2-2x) thin films grown by magnetron sputtering method were investigated for composition of x = 0.5 (SnSSe) in the present study. X-ray diffraction, energy dispersive X-ray ...
Investigation of band gap energy versus temperature for SnS2 thin films grown by RF-magnetron sputtering
(Elsevier B.V., 2020)
SnS2 thin films grown by magnetron sputtering technique were characterized by structurally and optically in the present work. Crystalline parameters, atomic compositions, and surface characteristics of SnS2 thin films were ...
Temperature-tuned band gap properties of MoS2 thin films
(Elsevier B.V., 2020)
MoS2 is one of the fascinating members of transition metal dichalcogenides and has attracted great attention due to its various optoelectronic device applications and its characteristic as two-dimensional material. The ...
Vibrational modes in ( TlGaS2)x‒(TlGaSe2)1−x mixed crystals by Raman measurements: compositional dependence of the mode frequencies and line‑shapes
(Springer, 2020)
TlGaS2 and TlGaSe2 ternary semiconducting compounds have been of scientific interest due to their large ultrafast optical nonlinearity characteristics. These remarkable properties make them promising semiconducting materials ...