Ara
Toplam kayıt 14, listelenen: 1-10
Transport and storage properties of CrSi2/Si junctions made using the CAPVD technique
(Elsevier Sci Ltd, 2010)
p-CrSi2/n-crystSi and p-CrSi2/p-crystSi hetero junctions produced by cathodic arc physical vapor deposition were worked out by means of capacitance-voltage-temperature (C-V-T) and current-voltage-temperature (I-V-T) ...
Excess Capacitance Due to Minority Carrier Injection in CrSi2/p-Type Crystalline Si Isotype Junction
(Iop Publishing Ltd, 2010)
Excess current and capacitance phenonema were observed for the first time on a CrSi2/p-type crystalline silicon junction produced by cathodic arc physical vapor deposition. The heterojunction was investigated by ...
The influence of Er3+ doping on the structural and optical properties of CeO2 thin films grown by PED
(Elsevier Science Bv, 2013)
Erbium doped CeO2 thin films were deposited on both Corning glass substrates and indium doped tin oxide (ITO) coated glass substrates by pulsed e-beam deposition (PED) method at room temperature. Structural features of Er ...
Structure and photovoltaic properties of Ag/p-CuPc/a-Si/c-Si/Ag organic-inorganic hybrid heterojunction fabricated by chemical spray pyrolysis technique
(Elsevier Science Bv, 2013)
This investigation refers to the fabrication of an organic-inorganic hybrid heterojunction photovoltaic device. Heterojunctions PV devices were fabricated by growing p-type organic CuPc films onto inorganic amorphous silicon ...
Correlation of DC and AC electrical properties of Al/p-Si structure by I-V-T and C(G/omega)-V-T measurements
(Elsevier Sci Ltd, 2009)
Current-voltage-temperature and admittance-gate bias-temperature measurements were performed on Al/p-Si structure to investigate transport and storage properties. In forward direction of former measurement, three distinct ...
Fotovoltaik Uygulamalar için GLAD Tekniği ile Büyütülen Spiral Nano Şekilli a-Si İnce Filmlerin Elektriksel ve Yapısal Özelliklerinin İncelenmesi
(2017)
Spiral nano şekilli a-Si ince filmler c-Si altlıklar üzerine elektron demeti buharlaştırma sistemi içerisinde GLAD tekniği kullanılarak hazırlanmıştır. Spiral nano şekilli ince filmlerin yapısal özellikleri X-ışınları ...
GLAD Tekniği ile Büyütülen Zig-Zag Nano Şekilli a-Si/c-Si Heteroeklemlerin Elektriksel ve Fotovoltaik Özelliklerinin İncelenmesi
(2017)
Zig-zag nano şekilli a-Si ince filmler c-Si altlıklar üzerine elektron demeti buharlaştırma sistemi içerisinde GLAD tekniği kullanılarak hazırlanmıştır. Zig-zag nano şekilli ince filmlerin yapısal özellikleri X-ışınları ...
Improvement in electrical and photovoltaic properties of a-Si/c-Si heterojunction with slanted nano-columnar amorphous silicon thin films for photovoltaic applications
(Elsevier Science Bv, 2015)
The flat a-Si and slanted nanocolumnar (S-nC) a-Si thin films were prepared on c-Si and corning glass substrates by e-beam physical vapor deposition (EB-PVD) technique. The structural properties of all the grown thin films ...
Investigation of structural and electrical properties of p-CuPc/c-Si and p-CuPc/a-Si/c-Si hybrid photodiodes prepared by CSP technique
(Elsevier Science Bv, 2014)
To produce p-CuPc/c-Si and p-CuPc/a-Si/c-Si heterojunctions, at first, amorphous silicon thin film was deposited on p-Si (111) and n-Si (100) single crystalline substrates by high vacuum electron beam evaporation technique. ...
Electrical properties of FePc organic semiconductor thin films obtained by CSP technique for photovoltaic applications
(Elsevier Sci Ltd, 2015)
Iron-phthalocyanine (FePc) organic semiconductor thin films were prepared on Corning glass and c-Si substrates at a substrate temperature of 150 degrees C by a chemical spray pyrolysis (CSP) technique. The structural ...