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Toplam kayıt 32, listelenen: 11-20
Temperature dependent band gap in SnS2xSe(2-2x) (x = 0.5) thin films
(Elsevier Ltd, 2020)
Structural and optical properties of SnS2xSe(2-2x) thin films grown by magnetron sputtering method were investigated for composition of x = 0.5 (SnSSe) in the present study. X-ray diffraction, energy dispersive X-ray ...
Characterization of Cu-rich and Zn-poor Cu2ZnSnS4 single crystal grown by vertical Bridgman technique
(Elsevier B.V., 2021)
To date, although a number of studies have focused on understanding the fundamental properties of Cu-poor/Zn-rich Cu2ZnSnS4 (CZTS) single crystals, little attention has been paid to investigate the physical properties of ...
Investigation of band gap energy versus temperature for SnS2 thin films grown by RF-magnetron sputtering
(Elsevier B.V., 2020)
SnS2 thin films grown by magnetron sputtering technique were characterized by structurally and optically in the present work. Crystalline parameters, atomic compositions, and surface characteristics of SnS2 thin films were ...
Temperature-tuned band gap properties of MoS2 thin films
(Elsevier B.V., 2020)
MoS2 is one of the fascinating members of transition metal dichalcogenides and has attracted great attention due to its various optoelectronic device applications and its characteristic as two-dimensional material. The ...
A Study on Tetragonal-star like Shaped Inverted Pyramid Texturing
(Institute of Electrical and Electronics Engineers Inc., 2021)
Surface texturing is one of the key process steps in solar cell fabrication. For an ideal surface texturing, surface recombination should be kept as low as possible while the light trapping property is improved. The formation ...
Illumination and voltage effects on the forward and reverse bias current-voltage (I-V) characteristics in In/In2S3/p-Si photodiodes
(Springer, 2021)
The illumination and voltage effects on the I-V measurements of the fabricated In/In2S3/p-Si photodiode were investigated in dark and under various illumination intensities (20–100 mW/cm2) between ± 2 V. Two linear regions ...
Growth and Characterization of Stoichiometric Cu2ZnSnS4 Crystal Using Vertical Bridgman Technique
(John Wiley and Sons Inc, 2022)
Stoichiometric Cu2ZnSnS4 (CZTS) single phase crystals are successfully grown in a single-zone vertical furnace by Bridgman technique. X-ray diffraction (XRD) and Raman spectroscopy measurements are employed to investigate ...
Optical and structural characteristics of electrodeposited Cd 1-xZnxS nanostructured thin films
(Elsevier B.V., 2021)
The structural and optical characteristics of Cd1-xZnxS (CdZnS) thin films grown by the electrodeposition method were investigated in the present paper. The crystalline structure of the grown CdZnS thin film was determined ...
Temperature-dependent optical characteristics of sputtered NiO thin films
(Springer Science and Business Media Deutschland GmbH, 2022)
In this work, nickel oxide thin films were deposited by radio frequency magnetron sputtering technique. X-ray diffraction (XRD), scanning electron microscopy and energy-dispersive X-ray analysis methods were applied to ...
Structural and temperature-tuned bandgap characteristics of thermally evaporated beta-In2S3 thin films
(Springer, 2021)
In2S3 is one of the attractive compounds taking remarkable interest in optoelectronic device applications. The present study reports the structural and optical characteristics of thermally evaporated beta-In2S3 thin films. ...